SGS Thomson Microelectronics STGP10NB60SDFP Datasheet
STGP10NB60SDFP
N-CHANNEL 10A - 600V - TO-220FP
PowerMesh™ IGBT
TYPE V
CES
V
CE(sat)
I
C
STGP10NB60SDFP 600 < 1.8 V10A
■ HIGHT I NPUT IMPEDANCE (VOLTAGE
DRIVEN)
■ LOW ON-VOLTAGE DROP
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the lates t high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “S” identifies a f amily
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
■ LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR C ONTROL
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
ICM()
P
TOT
V
ISO
T
stg
T
Collector-Emitter Voltage (VGS=0)
600 V
Reverse Battery Protection 20 V
Gate-Emitter Voltage ± 20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C
20 A
10 A
Collector Current (pulsed) 80 A
Total Dissipation at TC= 25°C
30 W
Derating Factor 0.2 W/°C
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 175 °C
j
(●) Pulsewidthlimited by safeoperatingarea
1/8November 2002
STGP10NB60SDFP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
ELECTRICAL CHARACT E RISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Break-down
IC= 250 µA, VGE= 0, 600 V
Voltage
V
BR(CES)
Emitter Collector Break-down
=1mA,VGE=0, 20 V
I
C
Voltage
I
CES
I
GES
Collector cut-off Current
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating ,Tj=25 °C
CE
VCE= Max Rating ,Tj=125 °C
V
=±20V,VCE= 0 ± 100 nA
GE
100µAµA
10
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold Voltage VCE=VGE,IC= 250µA 2.5 5 V
Collector-Emitter Saturation
Voltage
VGE=15V, IC= 5 A, Tj= 25°C
V
=15V, IC= 10 A, Tj= 25°C
GE
VGE=15V, IC= 10 A, Tj= 125°C
1.15
1.35
1.25
1.8
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
I
CL
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge VCE= 400V, IC=10A,
Latching Current V
=25V,IC=10 A
CE
= 25V, f = 1 MHz, VGE=0
V
CE
VGE=15V
= 480V, RG= 1kΩ,
clamp
Tj= 125°C
5S
610
65
12
33 nC
20 A
V
V
V
pF
pF
pF
2/8
STGP10NB60SDFP
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
t
(di/dt)
Eon
r
Turn-on Delay Time
Rise Time 0.46 µs
Turn-on Current Slope
on
Turn-on Switching Losses
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(V
E
t
r(Voff
E
t
c
off
t
f
(**)
off
t
c
t
f
(**)
off
Cross-over Time
)
Off Voltage Rise Time 1.2 µs
Fall Time 1.2 µs
Turn-off Switching Loss 5.0 mJ
Cross-over Time
)
Off Voltage Rise Time 1.2 µs
Fall Time 1.9 µs
Turn-off Switching Loss 8.0 mJ
=480V,IC=10A
CC
RG=1KΩ,VGE=15V
VCC= 480 V,IC=10A
RG=1KΩ,VGE=15V
V
= 480 V,IC=10A,
clamp
RGE=1KΩ,VGE=15V
V
= 480 V,IC=10A,
clamp
R
=1KΩ,VGE=15V
GE
Tj = 125 °C
0.7 µs
8
0.6
2.2 µs
3.8 µs
A/µs
mJ
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
V
f
t
rr
Q
rr
I
rrm
(●)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail
Switching Off Safe Operating Area
Forward Current
Forward Current pulsed
Forward On-Voltage If= 3.5 A
If= 3.5 A, Tj = 125 °C
=7A,VR=35V,
Reverse Recovery Time
Reverse Recovery Charge
I
f
Tj =125°C, di/dt = 100A/µs
Reverse Recovery Current
Thermal Impedance
1.4
1.15
50
70
2.7
7
56
1.9
A
A
V
V
ns
nC
A
3/8
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