SGS Thomson Microelectronics STGP10NB60S Datasheet



STGP10NB60S

N-CHANNEL 10A - 600V TO-220

PowerMESH IGBT

TYPE V

CES

V

CE(sat)

I

C

ST G P10NB60S 600 V < 1. 7 V 10 A

■ HIGHINPUT IMPEDANCE

(VOLTAGEDRIVEN)

■ VERYLOWON-VOLTAGEDROP(V

■ HIGHCURRENTCAPABILITY

■ OFFLOSSESINCLUDETAILCURRENT

cesat

)

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”S” identifies a family optimized to achieve minimum on-voltage drop for low frequencyapplications(<1kHz).

APPLICATIONS

■ LIGHT DIMMER

■ STATICRELAYS

■ MOTORCONTROL

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V V

V

I

CM

P

T

(•) Pulse width limitedby safe operating area

June 1999

Collect o r -Em i t t er Voltage (VGS= 0) 600 V

CES

Reverse Bat tery Protec t io n 20 V

ECR

Gate-Emitter V oltage

GE

I

Collect o r Current (continuous) at Tc=25oC20A

C

I

Collect o r Current (continuous) at Tc= 100oC10A

C

20 V

±

(•) Collect o r Current (pulsed) 80 A

Tot al Diss i pat ion at Tc=25oC80W

tot

Derat ing Factor 0.64 W/ Sto rage Temperature -65 t o 150

stg

T

Max. O perating Junction T emperature 150

j

o

C

o

C

o

C

1/8

STGP10NB60S

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambie nt Max Ther mal Resistanc e Case-sink Ty p

1.56

62.5

0.2

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwise specified)

(T

j

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 600 V

Break dow n V o lt age

V

BR(ECR)

Emitter-Collector

IC = 1 mA VGE=0 20 V

Break dow n V o lt age

I

CES

GES

Collect o r cut- off

=0)

(V

GE

Gat e- Em i t t er Leak age Current (V

CE

=0)

V

=MaxRating Tj=25oC

CE

=MaxRating Tj=125oC

V

CE

V

= ± 20 V VCE=0 ±100 nA

GE

10

100

ON(∗)

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

GE(th)

Gate Th reshold

VCE=VGEIC= 250 µA2.55V

Voltage

V

CE(SAT)

Collector-Emitter Sat urat ion Voltage

VGE=15V IC=5A

=15V IC=10A

V

GE

=15V IC=10A Tj= 125oC

V

GE

1.15

1.35

1.25

1.7

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

C

g

Q I

CL

Forward

fs

VCE=25 V IC=10A 5 S

Tr ansc on duc tance Input Capaci t anc e

ies

Out put Capac it ance

oes

Reverse Tr ansfer

res

VCE=25V f=1MHz VGE= 0 610

65 12

Capacit a nc e Gat e Charge VCE= 400 V IC=10A VGE= 15 V 33 nC

G

Latc hing C urrent V

=480V RG=1k

clamp

= 150oC

T

j

Ω

20 A

780

85 15

µ µA

V V V

pF pF pF

A

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

(di/dt)

2/8

t

d(on)

E

Delay T ime

t

Rise Tim e

r

Tur n-on Current S lop e

on

Turn-on

on

Switching Losses

VCC= 480 V IC=10A

=15V RG=1KΩ

V

GE

VCC=480V IC=10A

=1KΩ VGE=15V

R

G

=125oC

T

j

0.7

0.46 8

0.6

s

µ µs

A/µs

mJ

STGP10NB60S

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

tr(v

E

off

t

tr(v

E

off

(•)Pulse width limited by safe operating area (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)

Cross-O ver Time

c

Off Voltage Rise Time

)

off

Fall T ime

t

f

(**)

Turn-off Switching Loss Cross-O ver Time

c

Off Voltage Rise Time

)

off

Fall T ime

t

f

(**)

Turn-off Switching Loss

VCC=480V IC=10A R

=100

GE

V

CC

R

GE

= 125oC

T

j

Ω

=480V IC=10A

=100

Ω

VGE=15V

2.2

1.2

5.0

3.8

1.2

1.9

8.0

µs µ µs

mJ

µs µ µs

mJ

s

ThermalImpedance

3/8