SGS Thomson Microelectronics STGE200NB60S Datasheet
STGE200NB60S
N-CHANNEL 150A - 600V -ISOTOP
PowerMESH™ IGBT
TYPE
V
CES
STGE200NB60S 600 V 1.2 V
■ HIGH INPUTIMPEDANCE(VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
V
CE(sat)
(typ.)
1.3 V
cesat
I
C
150 A
200 A
)
T
C
100°C
25°C
DESCRIPTION
Using the latest h igh voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized to achieve very low
V
CE(sat)
(@ max
frequency of 1KHz).
APPLICATIONS
■ LOW FREQUENCY M OTOR CONTROLS
■ ALUMINUM WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
GE
I
C
I
C
ICM()
P
TOT
T
stg
T
j
() PULSE WIDTH LIMITED BY SAFE OPERATING AREA
Collector-Emitter Voltage (VGS=0)
600 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C
200 A
150 A
Collector Current (pulsed) 400 A
Total Dissipation at TC= 25°C
600 W
Derating Factor 4.8 W/°C
Storage Temperature – 65 to 150 °C
Max. Operating Junction Temperature 150 °C
1/9June 2003
STGE200NB60S
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.208 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
IC= 250 µA, VGE= 0 600 V
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating, TC=25°C
CE
= Max Rating, TC= 125 °C
V
CE
V
=±20V,VCE= 0 ±100 nA
GE
500 µA
5mA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VGE=15V,IC= 100 A
=15V,IC=150 A, Tj =100°C
V
GE
= 250µA
35V
1.2 1.6 V
1.2 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
CL
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current V
=15V,IC=100A
CE
=25V,f=1MHz,VGE=0
V
CE
= 480V, IC= 100 A,
V
CE
V
=15V
GE
= 480 V
clamp
Tj = 125°C , R
=10Ω
G
80 S
15600
1100
95
560
70
170
300 A
pF
pF
pF
nC
nC
nC
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time
r
Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
=480V,IC= 100 A
V
CC
RG=2Ω,VGE=15V
VCC= 480 V,IC= 100 A RG=2Ω
VGE= 15 V,Tj = 125°C
64
112
1800
12
ELECTRICAL CHARACTERISTICS (CONTINUED)
2/9
µs
µs
A/µs
mJ
STGE200NB60S
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
E
ts
t
c
t
r(Voff
t
d(off
t
f
E
(**)
off
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Cross-over Time
)
Off Voltage Rise Time 1.7 µs
)
Delay Time 2.4 µs
Fall Time 1.23 µs
Turn-off Switching Loss 59 mJ
Total Switching Loss 71 mJ
Cross-over Time
)
Off Voltage Rise Time 2.6 µs
)
Delay Time 2.8 µs
Fall Time 1.8 µs
Turn-off Switching Loss 92 mJ
Total Switching Loss 105 mJ
= 480 V, IC= 100 A,
cc
RGE=2Ω,VGE=15V
V
= 480 V, IC= 100 A,
cc
R
=2Ω,VGE=15V
GE
Tj = 125 °C
2.98 µs
4.52 µs
3/9
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