SGS Thomson Microelectronics STGD7NB60ST4 Datasheet
®
STGD7NB60S
N-CHANNEL 7A - 600V DPAK
Power MESH IGBT
TYPE V
STGD7NB60S 600 V < 1.6 V 7 A
■
HIGH INPUT IMPEDANCE
CES
V
CE(sat)
I
C
(VOLTAGE DRIVEN)
■
VERY LOW ON-VOLTAGE DROP (V
■
HIGH CURRENT CAPABILITY
■
OFF LOSSES INCLUDE TAIL CURRENT
■
SURFACE-MOU NTING DPAK (TO-252)
cesat
)
POWER PACKAGE IN TA P E & R E EL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
APPLICATIONS
■
LIGHT DIMMER
■
STATIC RELAYS
■
MOTOR CONTROL
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
CM
P
T
(•) Pulse width limited by safe operating area
November 1999
Collector-Emitter Voltage (VGS = 0) 600 V
CES
Reverse Battery Protection 20 V
ECR
Gate-Emitter Voltage ± 20 V
GE
I
Collector Current (continuous) at Tc = 25 oC15A
C
I
Collector Current (continuous) at Tc = 100 oC7A
C
(•) Collector Current (pulsed) 60 A
Total Dissipation at Tc = 25 oC55W
tot
Derating Factor 0.44 W/
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
o
C
1/8
STGD7NB60S
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
2.27
100
1.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter
IC = 250 µA V
= 0 600 V
GE
Breakdown Voltage
V
BR(ECR)
Emitter-Collector
IC = 1 mA V
= 0 20 V
GE
Breakdown Voltage
I
I
CES
GES
Collector cut-off
(V
= 0)
GE
Gate-Emitter Leakage
Current (V
CE
= 0)
= Max Rating Tj = 25 oC
V
CE
V
= Max Rating Tj = 125 oC
CE
= ± 20 V VCE = 0 ± 100 nA
V
GE
10
100
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold
V
= VGE IC = 250 µA 2.5 5 V
CE
Voltage
V
CE(SAT)
Collector-Emitter
Saturation Voltage
VGE = 15 V IC = 3 A
V
= 15 V IC = 7 A
GE
V
= 15 V IC = 7 A Tj = 125 oC
GE
1
1.2
1.1
1.4
1.6
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
C
C
C
Q
I
CL
Forward
fs
VCE =25 V IC = 7 A 4 S
Transconductance
Input Capacitance
ies
Output Capacitance
oes
Reverse Transfer
res
V
= 25 V f = 1 MHz V
CE
= 0 610
GE
65
12
Capacitance
Gate Charge VCE = 400 V IC = 7 A VGE = 15 V 33 nC
G
Latching Current V
= 480 V RG=1kΩ
clamp
T
= 150 oC
j
15 A
780
85
15
µA
µA
V
V
V
pF
pF
pF
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
0.7
0.46
8
0.4
(di/dt)
2/8
t
d(on)
E
Delay Time
Rise Time
t
r
Turn-on Current Slope
on
Turn-on
on
Switching Losses
VCC = 480 V IC = 7 A
V
= 15 V RG = 1 KΩ
GE
V
= 480 V IC = 7 A
CC
R
= 1 KΩ VGE = 15 V
G
T
= 125 oC
j
µs
µs
A/µs
mJ
STGD7NB60S
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
tr(v
E
off
t
tr(v
E
off
(•) Pulse width limited by safe operating area
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardi zat io n)
Cross-Over Time
c
Off Voltage Rise Time
)
off
Fall Time
t
f
Turn-off Switching Loss
(**)
Cross-Over Time
c
Off Voltage Rise Time
)
off
Fall Time
t
f
Turn-off Switching Loss
(**)
= 480 V IC = 7 A
CC
R
= 100 Ω VGE = 15 V
GE
V
= 480 V IC = 7 A
CC
R
= 100 Ω VGE = 15 V
GE
T
= 125 oC
j
2.2
1.2
1.2
3.5
3.8
1.2
1.9
5.3
µ
µ
µ
mJ
µ
µ
µ
mJ
s
s
s
s
s
s
Thermal Impedance
3/8
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