SGS Thomson Microelectronics STGD7NB60HT4 Datasheet
1/9July 2000
STGD7NB60H
N-CHANNEL 7A - 600V - DPAK
PowerMESH™ IGBT
■ HIGH INPUT IMPEDANCE
■ LOW ON-VOLTAGE DROP (V
cesat
)
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ VERY HIGH FREQUENCY OPERATION
■ CO-PACKAGED WITH TURBOSWITCHT
■ TYPICAL SHORT CIRCUIT WITHSTAND TIME
5MICROS S-family, 4 micro H family
■ ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a f amily optimized f or high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
TYPE V
CES
V
CE(sat)
I
C
STD7NB60H 600 V < 2.8 V7 A
Symbol Parameter Value Unit
V
CES
Collector-Em itter Voltage (VGS = 0)
600 V
V
ECR
Emitter-Colle ctor Voltage 20 V
V
GE
Gate-Emitter Voltage ± 20 V
I
C
Collector Current (continuos) at TC = 25°C
14 A
I
C
Collector Current (continuos) at TC = 100°C
7A
I
CM
(■)
Collector Current (pulsed) 56 A
P
TOT
Total Dissipation at TC = 25°C
55 W
Derating Factor 0.44 W/°C
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
DPAK
1
3
INTERNAL SCHEMATIC DIAGRAM
STGD7NB60H
2/9
THERMA L D ATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
SWITCHING ON
Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 1.5 °C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0 600 V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, TC = 25 °C
10 µA
VCE = Max Rating, TC = 125 °C
100 µA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ± 20V , VCE = 0 ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= VGE, IC = 250µA
35V
V
CE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 7 A
2.3 2.8 V
VGE = 15V, IC = 7 A, Tj =125°C
1.9 V
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward Transconductance
V
CE
= 25 V , IC=3 A
3.5 5 S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, VGE = 0
560 pF
C
oes
Output Capacitance 68 pF
C
res
Reverse Transfer
Capacitance
15 pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, IC = 7 A,
V
GE
= 15V
42
7.9
17.6
55 nC
nC
nC
I
CL
Latching Current V
clamp
= 480 V , Tj = 150°C
RG = 10 Ω
28 A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
CC
= 480 V, IC = 7 A
RG=10Ω , VGE = 15 V
15
48
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, IC = 7 A RG=10Ω
V
GE
= 15 V,Tj = 125°C
160
70
A/µs
µJ
3/9
STGD7NB60H
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by max. junction temp erature.
(**)Losses in clude Also the T ai l (Jedec Standardization)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
Cross-over Time
V
cc
= 480 V, IC = 7 A,
R
GE
= 10 Ω , VGE = 15 V
85 ns
t
r(Voff
)
Off Voltage Rise Time 20 ns
td(
off
)
Delay Time 75 ns
t
f
Fall Time 70 ns
E
off
(**)
Turn-off Switching Loss 85
µJ
E
ts
Total Switching Loss 130
µJ
t
c
Cross-over Time
V
cc
= 480 V, IC = 3 A,
R
GE
= 10 Ω , VGE = 15 V
Tj = 125 °C
150 ns
t
r(Voff
)
Off Voltage Rise Time 50 ns
td(
off
)
Delay Time 110 ns
t
f
Fall Time 110 ns
E
off
(**)
Turn-off Switching Loss 220
µJ
E
ts
Total Switching Loss 290
µJ
Thermal Impedance
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