SGS Thomson Microelectronics STGD3NB60SDT4 Datasheet
STGD3NB60SD
N-CHANNEL 3A - 600V DPAK
Power MESH IGBT
PRELIMINARY DATA
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
■
VERY LOW ON-VOLTAGE DROP (V
cesat
)
■
HIGH CURRENT CAPABILITY
■
OFF LOSSES INCLUDE TAIL CURRENT
■
INTEGRATED FREEWHEELING DIODE
■
SURFACE-MOU NTING DPAK (TO-252)
POWER PACKAGE IN TA P E & R E EL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
APPLICATIONS
■
GAS DISCHARGE LAMP
■
STATIC RELAYS
■
MOTOR CONTROL
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (VGS = 0) 600 V
V
GE
Gate-Emitter Voltage ± 20 V
I
C
Collector Current (continuous) at Tc = 25 oC6A
I
C
Collector Current (continuous) at Tc = 100 oC3A
I
CM
(•) Collector Current (pulsed) 25 A
P
tot
Total Dissipation at Tc = 25 oC48W
Derating Factor 0.32 W/
o
C
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
(•) Pulse width limited by safe operating area
TYPE V
CES
V
CE(sat)
I
C
STGD3NB60SD 600 V < 1.5 V 3 A
March 2000
1
3
DPAK
TO-252
(Suffix "T4")
1/8
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
3.125
100
1.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
j
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter
Breakdown Voltage
IC = 250 µA V
GE
= 0 600 V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating Tj = 25 oC
V
CE
= Max Rating Tj = 125 oC
10
100
µA
µA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ± 20 V VCE = 0 ± 100 nA
ON (∗
)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold
Voltage
V
CE
= VGE IC = 250 µA 2.5 5 V
V
CE(SAT)
Collector-Emitter
Saturation Voltage
VGE = 15 V IC = 1.5 A
V
GE
= 15 V IC = 3 A
V
GE
= 15 V IC = 3 A Tj = 125 oC
1
1.2
1.1
1.5
V
V
V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward
Transconductance
VCE =25 V IC = 3 A 1.7 2.5 S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25 V f = 1 MHz V
GE
= 0 255
30
5.6
330
40
7
pF
pF
pF
Q
G
Q
GE
Q
GC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480 V IC = 3 A VGE = 15 V 18
5.4
5.5
nC
nC
nC
I
CL
Latching Current V
clamp
= 480 V RG=1kΩ
T
j
= 150 oC
12 A
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
t
r
Delay Time
Rise Time
VCC = 480 V IC = 3 A
V
GE
= 15 V RG = 1kΩ
125
150
ns
ns
(di/dt)
on
E
on
Turn-on Current Slope
Turn-on Switching
Losses
V
CC
= 480 V IC = 3 A
R
G
= 1kΩ VGE = 15 V
T
j
= 125 oC
50
1100
A/µs
µJ
STGD3NB60SD
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
tr(v
off
)
t
d(off
)
t
f
E
off
(**)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
CC
= 480 V IC = 3 A
R
GE
= 1 kΩ VGE = 15 V
1.8
1.0
3.4
0.72
1.15
µ
s
µ
s
µ
s
µ
s
mJ
t
c
tr(v
off
)
t
d(off
)
t
f
E
off
(**)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
CC
= 480 V IC = 3 A
R
GE
= 1kΩ VGE = 15 V
T
j
= 125 oC
2.8
1.45
3.6
1.2
1.8
µ
s
µ
s
µ
s
µ
s
mJ
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
Forward Current
Forward Current pulsed
3
25
A
A
V
f
Forward On-Voltage If = 3 A
I
f
= 1 A
1.55
1.15
1.9 V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 3 A VR=200 V
dI/dt = 100 A/µS T
j
= 125 oC
1700
4500
9.5
ns
nC
A
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardi zat io n)
Thermal Impedance
STGD3NB60SD
3/8
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