SGS Thomson Microelectronics STGD3NB60S Datasheet
N-CHANNEL 3A - 600V DPAK
TYPE V
CES
STGD3NB60S 600 V < 1.5 V 3 A
■ HIGHINPUTIMPEDANCE
(VOLTAGEDRIVEN)
■ VERYLOW ON-VOLTAGEDROP (V
■ HIGHCURRENT CAPABILITY
■ OFFLOSSES INCLUDE TAIL CURRENT
■ SURFACE-MOUNTINGDPAK (TO-252)
POWERPACKAGEIN TAPE & REEL
(SUFFIX”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequencyapplications(<1kHz).
V
CE(sat)
cesat
I
C
)
STGD3NB60S
Power MESH IGBT
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ LIGHT DIMMER
■ STATICRELAYS
■ MOTORCONTROL
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
CM
P
T
(•) Pulse width limited by safe operating area
Collect o r -Em i t t er Voltage (VGS= 0) 600 V
CES
Reverse Bat tery Prot ect io n 20 V
ECR
Gate-Emitter Voltage
GE
I
Collect o r Current (continuo us) at Tc=25oC6A
C
I
Collect o r Current (continuo us) at Tc= 100oC3A
C
20 V
±
(•) Collect o r Current (pul s ed) 24 A
Tot al Dis sipation at Tc=25oC40W
tot
Derat ing Factor 0.32 W/
Sto rage Temperature -65 t o 15 0
stg
T
Max. O per a t ing J unction T emperat ur e 150
j
o
C
o
C
o
C
June 1999
1/8
STGD3NB60S
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
3.125
100
1.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
BR(CES)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n Voltage
I
I
ON (∗
CES
GES
Collect o r cut-off
=0)
(V
GE
Gat e- Em i t t er Lea kage
Current (V
)
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 20 V VCE=0 ±100 nA
GE
10
100
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GE(th)
Gate Threshold
VCE=VGEIC= 250 µA2.55V
Voltage
V
CE(SAT)
Collector-Emitter
Sat urat ion Voltage
VGE=15V IC=3A
V
=15V IC=1A
GE
1.2
1
1.5 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
C
C
C
Q
Q
g
Q
I
CL
Forward
fs
Tr ansc on duc tance
Input Capac i t ance
ies
Out put Capacitance
oes
Reverse Tr ansfer
res
Capacit a nc e
Tot al Gat e Charge
G
Gate-Emitt er Charge
GE
Gat e- Col lect or C harge
GC
Latc hing C ur rent V
VCE=25 V IC=3A 1.7 2.5 S
VCE=25V f=1MHz VGE= 0 255
30
5.6
VCE= 480 V IC=3A VGE=15V 18
5.4
5.5
=480V RG=1kΩ
clamp
T
= 150oC
j
12 A
µA
µ
V
pF
pF
pF
nC
nC
nC
A
SWITCHINGON
Symbol Parameter Test Cond i tion s Min. T yp . Max. Unit
(di/dt)
2/8
t
d(on)
E
Delay T ime
t
Rise Ti me
r
Tur n-on Current Slop e
on
Tur n-on Switching
on
Losses
VCC= 480 V IC=3A
=15V RG=1kΩ
V
GE
VCC= 480 V IC=3A
=1kΩ VGE=15V
R
G
T
= 125oC
j
170
540
30
300
ns
ns
A/µs
J
µ
STGD3NB60S
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
tr(v
(off)
t
d
E
off
t
tr(v
(off)
t
d
E
off
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Cross-Ov er Time
c
Off Voltage Rise Time
)
off
Delay T ime
Fall T ime
t
f
(**)
Turn-off Switching Loss
Cross-Ov er Time
c
Off Voltage Rise Time
)
off
Delay T ime
Fall T ime
t
f
(**)
Turn-off Switching Loss
V
= 480 V IC=3A
CC
R
=1k
Ω
= 480 V IC=3A
=10Ω VGE=15V
= 125oC
V
R
T
GE
CC
GE
j
VGE=15V
1.8
1.0
3.4
0.72
1.15
2.8
1.45
3.6
1.2
1.8
µs
µ
µs
µ
mJ
µ
µs
µ
µ
mJ
s
s
s
s
s
ThermalImpedance
3/8
Loading...