SGS Thomson Microelectronics STGD3NB60H Datasheet



STGD3NB60H

N-CHANNEL 3A - 600V TO-252

PowerMESH IGBT

TYPE V

CES

V

CE(sat)

I

C

STGD3NB60H 600 V < 2.8 V 3 A

■ HIGHINPUT IMPEDANCE

(VOLTAGEDRIVEN)

■ LOW ON-VOLTAGEDROP (V

■ LOW GATECHARGE

■ HIGHCURRENTCAPABILITY

■ VERYHIGH FREQUENCYOPERATION

■ OFFLOSSES INCLUDETAIL CURRENT

■ SURFACE-MOUNTINGDPAK (TO-252)

cesat

)

POWERPACKAGE IN TAPE & REEL (SUFFIX”T4”)

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequencyapplications(<120kHz).

APPLICATIONS

■ HIGHFREQUENCY MOTOR CONTROLS

■ SMPSAND PFC IN BOTH HARDSWITCH

AND RESONANTTOPOLOGIES

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V V

V

I

CM

P

T

(•) Pulsewidth limited by safeoperating area

June 1999

Collect o r -Em i t t er Voltage (VGS= 0) 600 V

CES

Emit t er-Collect or Voltage 20 V

ECR

Gate-Emitter V oltage

GE

I

Collect o r Curr ent (continuous) at Tc=25oC6A

C

I

Collect o r Curr ent (continuous) at Tc= 100oC3A

C

20 V

±

(•) Collect o r Curr ent (pulsed) 24 A

Tot al Dissipat ion at Tc=25oC35W

tot

Derat ing Factor 0.28 W/ Sto rage Tem perature - 65 to 150

stg

T

Max. Operat ing Junc tion Tem per ature 150

j

o

C

o

C

o

C

1/8

STGD3NB60H

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambient Max Ther mal Resistanc e Case-sink Ty p

3.57 100

1.5

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwise specified)

(T

j

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 600 V

Break dow n Volt age

I

CES

GES

Collect o r cut - off

=0)

(V

GE

Gat e- Em i t t er Leakage Current (V

CE

=0)

V

=MaxRating Tj=25oC

CE

=MaxRating Tj=125oC

V

CE

V

= ± 20 V VCE=0 ±100 nA

GE

10

100

ON(∗)

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

GE(th)

Gate Th reshold

VCE=VGEIC= 250 µ A35V

Voltage

V

CE(SAT)

Collector-Emitter Sat urat ion Volt age

VGE=15V IC=3A V

=15V IC=3A Tj=125oC

GE

2.4

1.9

2.8 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

C

Q Q

g

Q

I

CL

Forward

fs

Tr ansc on duc tance Input Capacitanc e

ies

Out put Capacitance

oes

Reverse Transfer

res

Capacit a nc e Tot al Gate Charge

G

Gate-Emitt er C harge

GE

Gat e- Col lect or C har ge

GC

Latc hing Curr ent V

VCE=25 V IC=3A 1.3 2.4 S

VCE=25V f=1MHz VGE= 0 160

23

4.5

VCE= 480 V IC=3A VGE=15V 21

235

33

6.6

300

43

8.6

27 nC

6

7.6

=480V RG=10Ω

clamp

T

= 150oC

j

12 A

µA µ

V

pF pF pF

nC nC

A

SWITCHINGON

Symbol Param et er Test Cond i t ions Mi n. Typ. Max. Uni t

(di/dt)

2/8

t

d(on)

E

Delay Time

t

Rise Time

r

Tur n-on Current Slope

on

Tur n-on Swit ching

on

Losses

VCC= 480 V IC=3A

=15V RG=10Ω

V

GE

VCC= 480 V IC=3A

=10Ω VGE=15V

R

G

T

= 125oC

j

16 30

400

37

ns ns

A/µs

J

µ

STGD3NB60H

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

tr(v

(off)

t

d

E

off

E

t

tr(v

(off)

t

d

E

off

E

(•) Pulse width limited by max. junction temperature (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (**)Losses Include Also The Tail (Jedec Standardization)

Cross-Over Time

c

Off Voltage Rise Time

)

off

Delay Time

t

Fall T ime

f

(**)

Turn-off Switching Loss Tot al Switching Loss

ts

Cross-Over Time

c

)

Off Voltage Rise Time

off

Delay Time

t

Fall T ime

f

(**)

Turn-off Switching Loss Tot al Switching Loss

ts

VCC= 480 V IC=3A R

GE

=10

Ω

VGE=15V

VCC= 480 V IC=3A R

GE

= 125oC

T

j

=10

Ω

VGE=15V

90 36 53 70 33 65

180

82 58

110

88

125

ns ns ns ns

µJ µ

ns ns ns ns

µ µ

J

J J

ThermalImpedance

3/8