SGS Thomson Microelectronics STGD3NB60H Datasheet

STGD3NB60H
N-CHANNEL 3A - 600V TO-252
PowerMESHIGBT
TYPE V
CES
V
CE(sat)
I
C
STGD3NB60H 600 V < 2.8 V 3 A
HIGHINPUT IMPEDANCE
(VOLTAGEDRIVEN)
LOW ON-VOLTAGEDROP (V
HIGHCURRENTCAPABILITY
VERYHIGH FREQUENCYOPERATION
OFFLOSSES INCLUDETAIL CURRENT
SURFACE-MOUNTINGDPAK (TO-252)
cesat
)
POWERPACKAGE IN TAPE & REEL (SUFFIX”T4”)
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequencyapplications(<120kHz).
APPLICATIONS
HIGHFREQUENCY MOTOR CONTROLS
SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V V
V
I
CM
P
T
() Pulsewidth limited by safeoperating area
June 1999
Collect o r -Em i t t er Voltage (VGS= 0) 600 V
CES
Emit t er-Collect or Voltage 20 V
ECR
Gate-Emitter V oltage
GE
I
Collect o r Curr ent (continuous) at Tc=25oC6A
C
I
Collect o r Curr ent (continuous) at Tc= 100oC3A
C
20 V
±
() Collect o r Curr ent (pulsed) 24 A
Tot al Dissipat ion at Tc=25oC35W
tot
Derat ing Factor 0.28 W/ Sto rage Tem perature - 65 to 150
stg
T
Max. Operat ing Junc tion Tem per ature 150
j
o
C
o
C
o
C
1/8
STGD3NB60H
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambient Max Ther mal Resistanc e Case-sink Ty p
3.57 100
1.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
BR(CES)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n Volt age
I
I
CES
GES
Collect o r cut - off
=0)
(V
GE
Gat e- Em i t t er Leakage Current (V
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 20 V VCE=0 ±100 nA
GE
10
100
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GE(th)
Gate Th reshold
VCE=VGEIC= 250 µ A35V
Voltage
V
CE(SAT)
Collector-Emitter Sat urat ion Volt age
VGE=15V IC=3A V
=15V IC=3A Tj=125oC
GE
2.4
1.9
2.8 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
C
C
C
Q Q
g
Q
I
CL
Forward
fs
Tr ansc on duc tance Input Capacitanc e
ies
Out put Capacitance
oes
Reverse Transfer
res
Capacit a nc e Tot al Gate Charge
G
Gate-Emitt er C harge
GE
Gat e- Col lect or C har ge
GC
Latc hing Curr ent V
VCE=25 V IC=3A 1.3 2.4 S
VCE=25V f=1MHz VGE= 0 160
23
4.5
VCE= 480 V IC=3A VGE=15V 21
235
33
6.6
300
43
8.6
27 nC
6
7.6
=480V RG=10
clamp
T
= 150oC
j
12 A
µA µ
V
pF pF pF
nC nC
A
SWITCHINGON
Symbol Param et er Test Cond i t ions Mi n. Typ. Max. Uni t
(di/dt)
2/8
t
d(on)
E
Delay Time
t
Rise Time
r
Tur n-on Current Slope
on
Tur n-on Swit ching
on
Losses
VCC= 480 V IC=3A
=15V RG=10
V
GE
VCC= 480 V IC=3A
=10 VGE=15V
R
G
T
= 125oC
j
16 30
400
37
ns ns
A/µs
J
µ
STGD3NB60H
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
tr(v
(off)
t
d
E
off
E
t
tr(v
(off)
t
d
E
off
E
() Pulse width limited by max. junction temperature () Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (**)Losses Include Also The Tail (Jedec Standardization)
Cross-Over Time
c
Off Voltage Rise Time
)
off
Delay Time
t
Fall T ime
f
(**)
Turn-off Switching Loss Tot al Switching Loss
ts
Cross-Over Time
c
)
Off Voltage Rise Time
off
Delay Time
t
Fall T ime
f
(**)
Turn-off Switching Loss Tot al Switching Loss
ts
VCC= 480 V IC=3A R
GE
=10
VGE=15V
VCC= 480 V IC=3A R
GE
= 125oC
T
j
=10
VGE=15V
90 36 53 70 33 65
180
82 58
110
88
125
ns ns ns ns
µJ µ
ns ns ns ns
µ µ
J
J J
ThermalImpedance
3/8
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