SGS Thomson Microelectronics STGB7NB60HDT4 Datasheet

STGB7NB60HD

N-CHANNEL 7A - 600V DPAK

PowerMESH IGBT

■

HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

■

LOW ON-VOLTAGE DROP (V

cesat

)

■

LOW GATE CHARGE

■

HIGH CURRENT CAPABILITY

■

VERY HIGH FREQUENCY OPERATION

■

OFF LOSSES INCLUDE TAIL CURRENT

■

CO-PACKAGED WITH TURBOSWITCH



ANTIPARALLEL DIODE

■

SURFACE-MOU NTING D2PAK (TO-263) POWER PACKAGE IN TA PE & REEL (SUFFIX "T4")

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

APPLICATIONS

■

HIGH FREQUENCY MOTOR CONTROLS

■

SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

Collector-Emitter Voltage (VGS = 0) 600 V

V

GE

Gate-Emitter Voltage ± 20 V

I

C

Collector Current (continuous) at Tc = 25 oC14A

I

C

Collector Current (continuous) at Tc = 100 oC7A

I

CM

(•) Collector Current (pulsed) 56 A

P

tot

Total Dissipation at Tc = 25 oC80W Derating Factor 0.64 W/

o

C

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

(•) Pulse width limited by safe operating area

TYPE V

CES

V

CE(sat)

I

C

STGB7NB60HD 600 V < 2.8 V 7 A

June 1999

1

3

D2PAK

TO-263

(Suffix "T 4")

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THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ

1.56

62.5

0.5

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

(T

j

= 25 oC unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter Breakdown Voltage

IC = 250 µA V

GE

= 0 600 V

I

CES

Collector cut-off (V

GE

= 0)

V

CE

= Max Rating Tj = 25 oC

V

CE

= Max Rating Tj = 125 oC

250

2000

µA µA

I

GES

Gate-Emitter Leakage Current (V

CE

= 0)

V

GE

= ± 20 V VCE = 0 ± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

Gate Threshold Voltage

V

CE

= VGE IC = 250 µA35V

V

CE(SAT)

Collector-Emitter Saturation Voltage

VGE = 15 V IC = 7 A V

GE

= 15 V IC = 7 A Tj = 125 oC

2.3

1.9

2.8 V V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

Forward Transconductance

VCE =25 V IC = 7 A 3.5 5 S

C

ies

C

oes

C

res

Input Capacitance Output Capacitance Reverse Transfer Capacitance

V

CE

= 25 V f = 1 MHz V

GE

= 0 390

45 10

560

68 15

730

90 20

pF pF pF

Q

G

Q

GE

Q

GC

Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

VCE = 480 V IC = 7 A VGE = 15 V 42

7.9

17.6

55 nC

nC nC

I

CL

Latching Current V

clamp

= 480 V RG=10Ω

T

j

= 150 oC

28 A

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

d(on)

t

r

Delay Time Rise Time

VCC = 480 V IC = 7 A V

GE

= 15 V RG = 10Ω

15 48

ns ns

(di/dt)

on

Eon(❍)

Turn-on Current Slope Turn-on Switching

Losses

V

CC

= 480 V IC = 7 A

R

G

= 10 Ω VGE = 15 V

T

j

= 125 oC

160 185

A/µs

µJ

STGB7NB60HD

2/8

ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

c

tr(v

off

)

t

d

(off)

t

f

E

off

(**)

E

ts

(❍)

Cross-Over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss

VCC = 480 V I

C

= 7 A

R

GE

= 10 Ω VGE = 15 V

85 20 75 70 85

235

ns ns ns ns

µ

J

µ

J

t

c

tr(v

off

)

t

d

(off)

t

f

E

off

(**)

E

ts

(❍)

Cross-Over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss

VCC = 480 V I

C

= 7 A

R

GE

= 10 Ω VGE = 15 V

T

j

= 125 oC

150

50 110 110 220 405

ns ns ns ns

µ

J

µ

J

COLLECTOR-EMITTER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

f

I

fm

Forward Current Forward Current pulsed

7

56

A A

V

f

Forward On-Voltage If = 7 A

I

f

= 7 A Tj = 125 oC

1.6

1.4

2.0 V V

t

rr

Q

rr

I

rrm

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

If = 7 A VR=200 V dI/dt = 100 A/µS T

j

= 125 oC

100 180

3.6

ns

nC

A

(•) Pulse width limited by max. junction temperature (

❍

) Include recovery losses on the STTA506 freewheeling diode (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardi zat io n)

Thermal Impedance

STGB7NB60HD

3/8