SGS Thomson Microelectronics STGB3NB60SD Datasheet
STGB3NB60SD
N-CHANNEL 3A - 600V D2PAK
Power MESH IGBT
TYPE V
CES
V
CE(sat)
I
C
ST G B3NB60SD 600 V < 1. 5 V 3 A
■ HIGHINPUT IMPEDANCE
(VOLTAGEDRIVEN)
■ VERYLOWON-VOLTAGEDROP(V
■ HIGHCURRENTCAPABILITY
■ OFFLOSSESINCLUDETAILCURRENT
■ INTEGRATEDFREEWHEELINGDIODE
■ SURFACE-MOUNTINGD
2
PAK(TO-263)
cesat
)
POWERPACKAGEIN TAPE & REEL
(SUFFIX”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs, with outstanding
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequencyapplications(<1kHz).
APPLICATIONS
■ GASDISCHARGELAMP
■ STATICRELAYS
■ MOTORCONTROL
3
1
D2PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
I
CM
P
T
(•) Pulse width limited by safeoperating area
March 2000
Collect o r -Em i t t er Volt age (VGS= 0) 600 V
CES
Gate-Emitter V oltage ± 20 V
GE
I
Collect o r Current (continuo us ) at Tc=25oC6A
C
I
Collect o r Current (continuo us ) at Tc= 100oC3A
C
(•) Collect o r Current (pul s ed) 25 A
Tot al Dis sipation at Tc=25oC70W
tot
Derat ing Fact or 0.46 W/
Sto rage Tem perature -65 t o 175
stg
T
Max. O per a t ing J unction T emperature 175
j
o
C
o
C
o
C
1/8
STGB3NB60SD
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
2.14
62.5
0.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
BR(CES)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n Voltage
I
I
ON (∗
CES
GES
Collect o r cut-off
=0)
(V
GE
Gat e- Em i t t er Lea kage
Current (V
)
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 20 V VCE=0 ±100 nA
GE
10
100
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GE(th)
Gate Th reshold
VCE=VGEIC= 250 µA2.55V
Voltage
V
CE(SAT)
Collector-Emitter
Sat urat ion Voltage
VGE=15V IC=1.5A
V
=15V IC=3A
GE
=15V IC=3A Tj=125oC
V
GE
1
1.2
1.1
1.5
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
C
C
C
Q
Q
g
Q
I
CL
Forward
fs
Tr ansc on duc tance
Input Capac i t ance
ies
Out put Capacitance
oes
Reverse Tr ansfer
res
Capacit a nc e
Tot al Gat e Charge
G
Gate-Emitt er Charge
GE
Gat e- Col lect or C har ge
GC
Latc hing C ur rent V
VCE=25 V IC=3A 1.7 2.5 S
VCE=25V f=1MHz VGE= 0 255
30
5.6
330
40
7
VCE= 480 V IC=3A VGE=15V 18
5.4
5.5
=480V RG=1k
clamp
= 150oC
T
j
Ω
12 A
µA
µ
V
V
V
pF
pF
pF
nC
nC
nC
A
SWITCHINGON
Symbol Parameter Test Cond i t ion s Mi n. Typ . Max. Unit
(di/dt)
2/8
t
d(on)
E
Delay T ime
t
Rise Ti me
r
Tur n-on Current Slop e
on
Tur n-on Switc hing
on
Losses
VCC= 480 V IC=3A
=15V RG=1kΩ
V
GE
VCC= 480 V IC=3A
R
=1k
G
= 125oC
T
j
Ω
VGE=15V
125
150
50
1100
ns
ns
A/µs
µJ
STGB3NB60SD
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
tr(v
t
E
tr(v
t
E
t
c
d(off
t
off
t
c
d(off
t
off
Cross-O ver T ime
Off Voltage Rise Time
)
off
Delay T ime
)
Fall T ime
f
(**)
Turn-off Switching Loss
Cross-O ver T ime
Off Voltage Rise Time
)
off
Delay T ime
)
Fall T ime
f
(**)
Turn-off Switching Loss
V
=480V IC=3A
CC
R
=1k
Ω
=480V IC=3A
=1kΩ VGE=15V
= 125oC
V
R
T
GE
CC
GE
j
VGE=15V
1.8
1.0
3.4
0.72
1.15
2.8
1.45
3.6
1.2
1.8
COLLECTOR-EMITTERDIODE
Symbol Parameter Test Cond iti ons M i n . Typ. Max. Unit
I
For ward Curre nt
f
I
V
t
Q
I
rrm
(•) Pulse width limitedby max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
For ward Curre nt pulsed
fm
For ward On-Voltage If=3A
f
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
Reverse Recovery Current
=1A
I
f
If=3A VR=200 V
dI/dt = 100 A/ µST
= 125oC
j
1.55
1.15
1700
4500
9.5
3
25
1.9 V
µs
µ
µs
µ
mJ
µ
µs
µ
µ
mJ
s
s
s
s
s
A
A
V
ns
nC
A
ThermalImpedance
3/8
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