SGS Thomson Microelectronics STGP3NB60KDFP, STGP3NB60K, STGP3NB60KD, STGB3NB60KD, STGD3NB60KT4 Datasheet
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1/14May 2002
STGP3NB60K - STGD3NB60K
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
N-CHANNEL 3A - 600V - TO-220/DPAK/D
2
PAK
PowerMESH™ IGBT
■ HIGH INPUT IMPEDANCE ( VO L TAG E DRIVEN)
■ LOW ON-VOLTAGE DROP (V
cesat
)
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control app lications with short circuit withstand capability.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOG IES
ORDERING INFORMATION
TYPE
V
CES
V
CE(sat)
(Typ) @125°C
I
C
@125°C
STGP3NB60K
STGD3NB60K
STGP3NB60KD
STGP3NB60KDFP
STGB3NB60KD
600 V
600 V
600 V
600 V
600 V
< 2 V
< 2 V
< 2 V
< 2 V
< 2 V
3 A
3 A
3 A
3 A
3 A
SALES TYPE MARKING PACKAGE PACKAGING
STGP3NB60K GP3NB60K TO-220 TUBE
STGD3NB60KT4 GD3NB60K DPAK TAPE & REEL
STGP3NB60KD GP3NB60KD TO-220 TUBE
STGP3NB60KDFP GP3NB60KDFP TO-220FP TUBE
STGB3NB60KDT4
GB3NB60KD
D
2
PAK
TAPE & REEL
TO-220
1
2
3
1
3
1
2
3
1
3
TO-220FP
DPAK
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
Std. Version “D” Version
STGP3NB60K/STGD3NB60K/ST GP3NB60KD/STGP3NB60K D FP/S TG B 3NB60K D
2/14
ABSOLUTE MAXIMUM RATINGS
(n) Puls e width limited by safe operating area
(1) For “D” version only
THERMA L D ATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETE RS
Symbol Parameter Value Unit
TO-220
D
2
PAK
TO-220FP DPAK
V
CES
Collector-Emitter Voltage (VGS = 0)
600 V
V
ECR
Emitter-Collector Voltage 20 V
V
GE
Gate-Emitter Voltage ±20 V
I
C
Collector Current (continuos) at TC = 25°C
666A
I
C
Collector Current (continuos) at TC = 100°C
333A
I
CM
(n)
Collector Current (pulsed) 24 24 24 A
If (1)
Forward Current 3 A
I
fm
(1)
Forward Current Pulsed 24 A
P
TOT
Total Dissipation at TC = 25°C
68 25 60 W
Derating Factor 0.75 W/°C
V
ISO
Insulation Withstand Voltage A.C. -- 2500 -- V
T
stg
Storage Temperature
– 55 to 150
150
°C
T
j
Max. Operating Junction Temperature
TO-220
D
2
PAK
TO-220FP DPAK
Rthj-case Thermal Resistance Junction-case Max 1.8 5 2.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0 600 V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
50
500
µA
µA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ±20V , VCE = 0 ±100 nA
V
GE(th)
Gate Threshold Voltage
V
CE
= VGE, IC = 250µA
57V
V
CE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 3 A
VGE = 15V, IC = 3 A, Tj =125°C
2.3
1.9
2.8 V
V
3/14
STGP3NB60K/STGD3N B 60K/S TG P3N B60KD/STGP3NB60KDFP/ST GB 3N B60KD
SWITCHI N G PARAMETERS
COLLECTOR-EMITTER DIODE (“D” VERSION)
Note: 1. Pulsed: Pulse dura tion = 300 µs, duty cycle 1. 5 %.
2. Pulse wi dt h l i mited by max. j unction temperature .
(**)Losses in clude Also th e T ai l (Jedec Standardization)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward Transconductance
V
CE
= 25V, Ic = 3 A
2.4 S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1 MHz, VGE = 0 218
33
5.8
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, IC = 3 A,
VGE = 15V
14
3.3
7.5
18 nC
nC
nC
tscw Short Circuit Withstand Time V
ce
= 0.5 V
BR(CES)
, VGE=15V,
Tj = 125°C , RG = 10 Ω
10 µs
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VCC = 480 V, IC = 3 A
RG=10Ω, VGE = 15 V
14
5
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, IC = 3 A RG=10Ω
VGE = 15 V,Tj = 125°C
520
30
A/µs
µJ
t
c
tr(V
off
)
td(
off
)
t
f
E
off
(**)
E
ts
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
V
cc
= 480 V, IC = 3 A,
R
GE
= 10 Ω , VGE = 15 V
Tj = 25 °C
122
26.5
33
100
58
85
ns
ns
ns
ns
µJ
µJ
t
c
tr(V
off
)
td(
off
)
t
f
E
off
(**)
E
ts
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
V
cc
= 480 V, IC = 3 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
210
66
100
120
165
195
ns
ns
ns
ns
µJ
µJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
f
Forward On-Voltage If = 1.5 A
If = 1.5 A, Tj = 125 °C
1.31
0.95
1.8
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 3 A ,VR = 35 V,
Tj =125°C, di/dt = 100A/µs
45
70
2.7
ns
nC
A
STGP3NB60K/STGD3NB60K/ST GP3NB60KD/STGP3NB60K D FP/S TG B 3NB60K D
4/14
Collector-Emitter On Voltage vs Collector Current
Normalized Collector-Emitter On Voltage vs Temp.
Transconductance
Gate Threshold vs Temperature
Transfer Characteristics
Output Characteristics
5/14
STGP3NB60K/STGD3N B 60K/S TG P3N B60KD/STGP3NB60KDFP/ST GB 3N B60KD
Total Switching Losses vs Temperature Emitter-collector Diode Characteristics
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Capacitance Variations
Normalized Breakdown Volta ge vs Temperature
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