SGS Thomson Microelectronics STGB3NB60HD Datasheet



STGB3NB60HD

N-CHANNEL 3A - 600V TO-263

PowerMESH IGBT

TYPE V

CES

V

CE(sat)

I

C

ST G B3NB60HD 600 V < 2. 8 V 3 A

■ HIGHINPUT IMPEDANCE

(VOLTAGEDRIVEN)

■ LOW ON-VOLTAGEDROP (V

■ LOW GATECHARGE

■ HIGHCURRENTCAPABILITY

■ VERYHIGH FREQUENCYOPERATION

■ OFFLOSSES INCLUDETAIL CURRENT

■ CO-PACKAGEDWITH TURBOSWITCH

ANTIPARALLELDIODE

■ SURFACE-MOUNTINGD

2

PAK(TO-263)

cesat

)

POWERPACKAGE IN TAPE & REEL (SUFFIX”T4”)

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequencyapplications(<120kHz).

3

1

D2PAK

TO-263

(Suffix”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■ HIGHFREQUENCY MOTOR CONTROLS

■ SMPSAND PFC IN BOTH HARDSWITCH

AND RESONANTTOPOLOGIES

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V

I

CM

P

T

(•) Pulse width limited by max. junction temperature

June 1999

Collect o r -Em i t t er Volt age (VGS= 0) 600 V

CES

Gate-Emitter V oltage ± 20 V

GE

I

Collect o r Current (continuous ) at Tc=25oC6A

C

I

Collect o r Current (continuous ) at Tc= 100oC3A

C

(•) Collect or Current (pulsed) 24 A

Tot al Dissipation at Tc=25oC70W

tot

Derat ing Fact or 0.56 W/ Sto rage Temperature -65 to 150

stg

T

Max. Oper a t ing Junction Tem perature 150

j

o

C

o

C

o

C

1/8

STGB3NB60HD

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambient Max Ther mal Resistanc e Case-sink Ty p

1.78

62.5

0.5

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwise specified)

(T

j

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 600 V

Break dow n Voltage

I

CES

GES

Collect o r cut-of f

=0)

(V

GE

Gat e- Em i t t er Leakage Current (V

CE

=0)

V

=MaxRating Tj=25oC

CE

=MaxRating Tj=125oC

V

CE

V

= ± 20 V VCE=0 ±100 nA

GE

100

1000

ON(∗)

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

GE(th)

Gate Th reshold

VCE=VGEIC= 250 µ A35V

Voltage

V

CE(SAT)

Collector-Emitter Sat urat ion V olt age

VGE=15V IC=3A V

=15V IC=3A Tj=125oC

GE

2.4

1.9

2.8 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

C

Q Q

g

Q

I

CL

Forward

fs

Tr ansc on duc tance Input Capaci t ance

ies

Out put Capac it ance

oes

Reverse Transfer

res

Capacit a nc e Tot al Gate Charge

G

Gate-Emitt er C harge

GE

Gat e- Col lect or C har ge

GC

Latc hing C urrent V

VCE=25 V IC=3A 1.3 2.4 S

VCE=25V f=1MHz VGE= 0 160

23

4.5

VCE= 480 V IC=3A VGE=15V 21

235

33

6.6

300

43

8.6

27 nC

6

7.6

=480V RG=10Ω

clamp

T

= 150oC

j

12 A

µA µ

V

pF pF pF

nC nC

A

SWITCHINGON

Symbol Param et er Test Co n d i t ions Min. Typ. Max. Uni t

(di/dt)

2/8

t

d(on)

t

r

Eon(❍)

Delay Time Rise Tim e

Tur n-on Current Slope

on

Tur n-on Switc hing Losses

VCC= 480 V IC=3A

=15V RG=10Ω

V

GE

V

= 480 V IC=3A

CC

=10Ω VGE=15V

R

G

T

= 125oC

j

16 30

400

77

ns ns

A/µs

J

µ

STGB3NB60HD

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

tr(v t

E

tr(v t

E

(off)

d

off

ts

(off)

d

off

ts

t

Cross-Over Tim e

c

Off Voltage Rise Time

)

off

Delay Time

t

Fall T ime

f

(**)

Turn-off Switching Loss

(❍)

Tot al Switching Lo ss Cross-Over Tim e

c

Off Voltage Rise Time

)

off

Delay Time Fall T ime

t

f

Turn-off Switching Loss

(**) (❍)

Tot al Switching Lo ss

VCC = 480 V I R

GE

=10

Ω

VGE=15V

VCC = 480 V I R

GE

= 125oC

T

j

=10

Ω

VGE=15V

=3A

C

=3A

C

90 36 53 70 33

100 180

82 58

110

88

165

COLLECTOR-EMITTERDIODE

Symbol Param et er Test Co n d itions M i n . Typ. Max. Unit

I

For ward Curre nt

f

I

V

t

Q

I

rrm

(•) Pulse width limited by max. junction temperature (

❍) Include recovery losses on the STTA306 freewheeling diode

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (**)Losses Include Also The Tail (Jedec Standardization)

For ward Curre nt puls e d

fm

For ward On-Voltage If=3A

f

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

Reverse Recovery Current

=3A Tj= 125oC

I

f

If=3A VR=200 V dI/dt = 100 A/µST

= 125oC

j

1.6

1.4 87

160

3.7

3

24

2.0 V

ns ns ns ns

µJ µ

ns ns ns ns

µ µ

J

J J

A A

V

ns

nC

A

ThermalImpedance

3/8