SGS Thomson Microelectronics STGB20NB37LZ Datasheet



STGB20NB37LZ

N-CHANNEL CLAMPED 20A D2PAK

INTERNALLYCLAMPED PowerMESH

TYPE V

ST G B20NB37LZ C LA MP ED < 2.0 V 20 A

■ POLYSILICONGATEVOLTAGE DRIVEN

■ LOW THRESHOLDVOLTAGE

■ LOW ON-VOLTAGEDROP

■ HIGHCURRENT CAPABILITY

■ HIGHVOLTAGECLAMPINGFEATURE

■ SURFACE-MOUNTINGD

CES

POWERPACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)

DESCRIPTION

Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstandingperformances.

The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zenersuppliesan ESD protection.

APPLICATIONS

■ AUTOMOTIVEIGNITION

V

CE(sat)

2

PAK(TO-263)

I

C

IGBT

PRELIMINARY DATA

3

1

D2PAK

TO-263

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V
V

V

I

CM

E

P

E
T

(•) Pulsewidth limited by safeoperating area

February 2000

Collector-Emitter Voltage (VGS=0) CLAMPED V

CES

Reverse Battery Protection 20 V

ECR

Gate-Emitter Voltage CLAMPED V

GE

I

Coll ect or Current (continuous) at Tc=25oC40A

C

I

Coll ect or Current (continuous) at Tc=100oC30A

C

(•) Coll ect or Current (pu ls ed) 80 A

Single Pulse E n ergy Tc = 25oC 700 mJ

AS

Tot al Diss ipa t ion at Tc=25oC 150 W

tot

Derating Facto r 1 W/
ESD (H uman Body Mo del) 4 KV

SD

St orage T emperature -65 to 175

stg

Max. Operating Junct ion T emperature 175

T

j

o

C

o

C

o

C

1/6

STGB20NB37LZ

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p

1

62.5

0.2

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwise specified)

(T

j

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

BV

(CES)

(ECR)

Clamped Volt a ge IC=2mA VGE=0 TC=-40oC

I

=2mA VGE=0 TC=25oC

C

=2mA VGE=0 TC=150oC

I

C

Emitter C ollector

IC=75mA TC=25oC20 28 V

380
375
370

405
400
395

430
425
420

Break -down V oltage

BV

GE

Gate Emitter

IG=± 2mA 121416V

Break -down V oltage

I

CES

I

GES

Collect o r cut-off
Current (VG E = 0)

Gat e- Em i t t er Leak age

VCE=15V VGE=0 TC=150oC

= 200 V VGE=0 TC= 150oC

V

CE

VGE= ± 10 V VCE=0 ±300 ± 660 ± 1000 µA

10

100

Current (VCE = 0)

R

Gate Emitter Resistance 10 15 30 K

GE

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(SAT)

Gate Threshold
Voltage

Collector-Emitter
Sat urat ion Voltage

VCE=VGEIC= 250µATC=-40oC
V

CE=VGEIC

V

CE=VGEIC

= 250 µ ATC=25oC
= 250µATC=150oC

VGE=4.5V IC=10A TC=25oC

=4.5V IC=10A TC=150oC

V

GE

=4.5V IC=20A TC=25oC

V

GE

=4.5V IC=20A TC=150oC

V

GE

1.2

1.0

0.6

1.4 2

1.1

1.0

1.35

1.25

1.8

1.7

2.0

2.0

V
V
V

µ
µA

V
V
V

V
V
V
V

A

Ω

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

C

C

C

Q

2/6

Forward

fs

VCE=25V IC=20A 35 S

Tr ansc on duc tance
Input Capaci t anc e

ies

Out put Capac it ance

oes

Reverse Tr ansfer

res

VCE=25V f=1MHz VGE= 0 2300

165

28

Capacit a nc e
Gat e Ch ar ge VCE= 280 V IC=20A VGE=5V 51 nC

G

pF
pF
pF