SGS Thomson Microelectronics STGB20NB32LZ-1 Datasheet
STGB20NB32LZ
STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE V
STGB20NB32LZ
STGB20NB32LZ-1
■ POLYSILICON GATE VOLTAGE DRIVEN
■ LOW THRESHOLD VOLTAGE
■ LOW ON-VOLTAGE DROP
■ HIGH CURRENT CAPABILITY
■ HIGH VOLTAGE CLAMPING FEATURE
■ SURFACE-MOUNTING D²PAK (TO-263)
CES
CLAMPED
CLAMPED
V
CE(sat)
< 2.0 V
< 2.0 V
I
C
20 A
20 A
POWER PACKAGE IN TUBE (NO SUFFIX)OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
Using the lat es t high voltage t echnology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
■ AUTOMOTIVE IGNITION
3
D2PAK
1
I2PAK
2
1
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
Eas
P
tot
E
SD
T
stg
T
j
(•)Pulse width limited by safe operating area
Collector-Emitter Voltage (VGS=0)
CLAMPED V
Reverse Battery Protection 20 V
Gate-Emitter Voltage CLAMPED V
Collector Current (continuous) at Tc= 25°C
Collector Current (continuous) at Tc= 100°C
()
Collector Current (pulsed) 80 A
Single Pulse Energy T
= 25°C
c
Total Dissipation at Tc=25°C
40 A
30 A
700
150 W
Derating Factor 1 W/°C
ESD (Human Body Model) 4 KV
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
mJ
1/11December 2002
STGB20NB32LZ - STGB20NB32LZ-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.2 °C/W
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
BV
BV
(CES)
(ECR)
Clamped Voltage
Emitter Collector Break-down
=2mA,VGE= 0, Tc= - 40°C
C
IC=2mA,VGE= 0, Tc= 25°C
=2mA,VGE= 0, Tc= 150°C
I
C
=75mA,Tc=25°C 20 28
I
C
330 355 380 V
325 350 375 V
320 345 370 V
Voltage
BV
GE
Gate Emitter Break-down
IG=±2mA 121416
Voltage
I
CES
I
GES
R
GE
Collector cut-off Current
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
Gate Emitter Resistance 10 15 25 KΩ
=15V,VGE=0 ,TC=150 °C
V
CE
VCE=200 V, VGE=0 ,TC=150°C
V
=±10V,VCE= 0 ± 400 ± 660 ± 1000
GE
10 µA
100 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VCE=VGE,IC= 250µA, Tc= 25°C
V
CE=VGE,IC
VGE=4.5V, IC=10A,Tc=25°C
=4.5V, IC= 10 A, Tc= 150°C
V
GE
=4.5V, IC=20A,Tc=25°C
V
GE
VGE=4.5V, IC= 20 A, Tc= 150°C
= 250µA, Tc=-40°C
= 250µA, Tc=150°C
1.2
1V
1.4 2
0.6 V
1.1 1.8 V
1 1.7 V
1.35 2 V
1.25 2 V
V
V
µA
V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
=25V,IC=20 A
CE
V
= 25 V, f = 1 MHz, VGE=0
CE
VGE=5V
35 S
2300 pF
28 pF
51 nC
2/11
g
fs
C
ies
C
oes
C
res
Q
g
Forward Transconductance
Input Capacitance
Output Capacitance 165 pF
Reverse Transfer
Capacitance
Gate Charge VCE= 280 V,IC=20A,
STGB20NB32LZ - STG B 20NB32L Z-1
FUNCTIONAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
II Latching Current V
U.I.S. Functional Test Open
Secondary Coil
=250V,TC= 150 °C
Clamp
=1KΩ,VGE= 4.5 V
R
GOFF
R
=1KΩ,L=3mH,Tc=25°C
GOFF
=1KΩ , L = 3mH ,Tc=150°C
R
GOFF
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
Delay Time
r
Rise Time
Turn-on Current Slope VCC= 250 V,IC=20A
on
VCC=250V,IC=20A
R
=1KΩ,VGE= 4.5 V
G
=1KΩ,VGE= 4.5 V
R
G
Eon Turn-on Switching Losses VCC= 250 V,IC=20A,Tc=25°C
=1KΩ,VGE= 4.5 V,Tc=150°C
R
G
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
c
tr(V
off
t
f
t
(
d
off
(**)
E
off
t
c
t
r(Voff
t
f
t
d(off
E
(**)
off
(**)Losses Include Also the Tail (jedec Standardization)
Cross-Over Time
)
Off Voltage Rise Time 2.6 µs
Fall Time 2µs
)
Off Voltage Delay Time 11.5 µs
Turn-off Switching Loss 11.8 mJ
Cross-Over Time
)
Off Voltage Rise Time 3.5 µs
Fall Time 3.9 µs
)
Off Voltage Delay Time 12 µs
Turn-off Switching Loss 17.8 mJ
= 250 V,IC=20A,
cc
RGE=1KΩ,VGE= 4.5 V
V
= 250 V,IC=20A,
cc
R
=1KΩ,VGE= 4.5 V
GE
Tc = 150 °C
80 A
21.6
15
26
18
2.3
0.6
550 A/µs
8.8
9.2
4.8 µs
7.8 µs
A
A
µs
µs
mJ
mJ
Thermal Impedance
3/11
STGB20NB32LZ - STGB20NB32LZ-1
Output Characteristics
Transfer Characteristics
TransconductanceNormalized Gate Threshold Voltage vs Temp.
Collector-Emitter On Voltage vs Te mpera ture
4/11
Capacitance Variations
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