SGS Thomson Microelectronics STGB10NB37LZ Datasheet
STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK
INTERNALLYCLAMPED PowerMESH
TYPE V
ST G B10NB37LZ C LA MP ED < 1.8 V 10 A
■ POLYSILICONGATEVOLTAGE DRIVEN
■ LOW THRESHOLDVOLTAGE
■ LOW ON-VOLTAGEDROP
■ HIGHCURRENT CAPABILITY
■ HIGHVOLTAGECLAMPINGFEATURE
■ SURFACE-MOUNTINGD
CES
POWERPACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, SGS-Thomson has
designed an advanced family of IGBTs with
outstandingperformances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zenersuppliesan ESD protection.
APPLICATIONS
■ AUTOMOTIVEIGNITION
V
CE(sat)
2
PAK(TO-263)
I
C
IGBT
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
CM
P
E
T
(•) Pulsewidth limited by safeoperating area
June 1999
Collect o r -Em i t t er Voltage ( VGS=0) CLAMPED V
CES
Reverse Bat tery P rotection 18 V
ECR
Gate-Emitter Voltage CLAMPED V
GE
I
Collect o r Current (con t inuous) at Tc=25oC20A
C
I
Collect o r Current (con t inuous) at Tc= 100oC20A
C
(•) Collect o r Current (pul sed) 60 A
Tot al Diss i pat ion at Tc=25oC 125 W
tot
Derat ing Factor 0.83 W/
ESD (Human Body M od el) 4 KV
SD
Sto rage Temperatur e - 65 to 175
stg
T
Max. O pera t ing J unc t ion T emperature 175
j
o
C
o
C
o
C
1/8
STGB10NB37LZ
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
1.2
62.5
0.2
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
BV
BV
BV
I
I
(CES)
(ECR)
GE
CES
GES
Clamped Volt a ge IC= 2 mA VGE=0
=-40to150oC
T
j
Emitter C ollector
Break -down V oltage
Gate Emitter
Break -down V oltage
Collect o r cut-off
Current (VG E = 0)
Gat e- Em i t t er Leak age
IC=75mA VGE=0
=-40to150oC
T
j
IC=± 2mA
=-40to150oC
Τ
j
VCE=15V VGE=0 Tj=150oC
= 200 V VGE=0 Tj= 150oC
V
CE
VGE= ± 10 V VCE=0 ±0.7 mA
375 400 425 V
18 V
12 16 V
10
100
Current (VCE = 0)
R
Gate Emitter Resistance 20 K
GE
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GE(th)
V
CE(SAT)
I
Gate Threshold
Voltage
Collector-Emitter
Sat urat ion Voltage
Collect o r Current VGE=4.5V VCE=9V 20 A
C
VCE=VGEIC= 250µA
=-40to150oC
T
j
VGE=4.5V IC=10A Tj=25oC
=4.5V IC=10A Tj=-40oC
V
GE
0.6 2.4 V
1.2
1.8 V
1.3
µ
µA
V
A
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
C
C
C
Q
2/8
Forward
fs
VCE=25V IC= 10 A 10 18 S
Tr ansc on duc tance
Input Capaci t anc e
ies
Out put Capac it ance
oes
Reverse Tr ansfer
res
VCE=25V f=1MHz VGE= 0 1250
103
18
Capacit a nc e
Gat e Ch ar ge VCE= 320 V IC=10A VGE=5V 28 nC
G
1700
140
25
pF
pF
pF
STGB10NB37LZ
FUNCTIONALCHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
II Lat ching C ur rent V
U.I.S. Unc lam pe d Ind uct ive
Switching Current
Func t ion al T e s t
AS
Single Pulse
E
Avalanc h e Energy
E
Revers e Avalanc he
AR
Energy
R
R
R
T
T
T
Tc=125oC duty cycle < 1 %
pulse width lim it ed by t
= 320 V VGE=5V
CLAM P
=1K
Ω
GOFF
=1 KΩ L = 200 µHTj=125oC
GOFF
=1 KΩ L=3mH
GOFF
=55oC
start
=55oC
start
=150oC
start
T
jmax
C
20 A
=125oC
15
12
215
150
10 mJ
A
A
mJ
mJ
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
t
r
(di/dt)
E
on
Delay T im e
Rise Tim e
Tur n-on Current Slope
on
Turn-on
VCC= 320 V IC=10A
=5V RG=1KΩ
V
GE
VCC=320V IC=10A
R
=1K
G
Ω
VGE=5V
520
340
17
180
ns
ns
A/µs
µ
Switching Losses
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
tr(v
td(
E
off
t
tr(v
td(
E
off
(•) Pulse width limited by safe operatingarea (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % (**)LossesInclude Also TheTail(jedec Standardization)
Cross-Over T ime
c
Off Voltage Rise Time
)
off
Fall Time
t
f
Off Volt age Delay T im e
)
off
(**)
Turn-off Switching Loss
Cross-Over T ime
c
)
Off Voltage Rise Time
off
t
Fall Time
f
)
Off Volt age Delay T im e
off
(**)
Turn-off Switching Loss
V
R
V
R
T
=320V IC=10A
CLAM P
=1KΩ VGE=5V
GE
=320V IC=10A
CLAM P
=1KΩ VGE=5V
GE
= 125oC
j
4
2.2
1.5
14.8
4.0
5.2
2.8
2
15.8
6.5
µ
µs
µs
µs
mJ
µ
µs
µ
µs
mJ
Safe OperatingArea Thermal Impedance
J
s
s
s
3/8
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