SGS Thomson Microelectronics STGB10N60L Datasheet
STGB10N60L
N-CHANNEL 10A - 600V D2PAK
LOGIC LEVEL IGBT
TYPE V
CES
V
CE(sat)
I
ST G B10N60L 600 V < 1. 95 V 10 A
■ HIGHINPUT IMPEDANCE
(VOLTAGEDRIVEN)
■ VERYLOWON-VOLTAGEDROP(V
■ LOW THRESHOLD VOLTAGE
cesat
(LOGICLEVEL INPUT)
■ HIGHCURRENTCAPABILITY
■ OFFLOSSESINCLUDETAILCURRENT
■ SURFACE-MOUNTINGD2PAK (TO-263)
POWERPACKAGEIN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
■ ELECTRONICIGNITION
■ LIGHT DIMMER
■ STATICRELAYS
C
)
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
CM
P
T
(•) Pulsewidth limited by safe operating area
June 1999
Collect o r -Em i t t er Volt age (VGS= 0) 600 V
CES
Reverse Battery Protection 25 V
ECR
Gate-Emitter V oltage
GE
I
Collect o r Current (con t inuo us ) at Tc=25oC25A
C
I
Collect o r Current (con t inuo us ) at Tc= 100oC20A
C
15 V
±
(•) Collect o r Current (pul sed) 100 A
Tot al Dis si pat ion at Tc=25oC 125 W
tot
Derat ing Fact or 0.83 W/
Sto rage Temper at ure -65 t o 175
stg
T
Max. O perating Junc t ion Temperat ure 175
j
o
C
o
C
o
C
1/8
STGB10N60L
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
1.2
62.5
0.1
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
= - 40 to 150oC unlessotherwisespecified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. U nit
V
BR(ces)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n V o lt age
I
I
CES
GES
Collect o r cut-off
=0)
(V
GE
Gat e- Em i t t er Leak age
Current (V
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 15 V VCE=0 ±100 nA
GE
25
100
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. U nit
V
GE(th)
V
CE(SAT)
I
Gate Th reshold
Voltage
Collector-Emitter
Sat urat ion Voltage
Collect o r Current VGE=4.5V VCE=7V 15 45 A
C
VCE=VGEIC= 250 µA
V
CE=VGEIC
=250µATj=25oC
VGE=4.5V IC=8A Tj=-40oC
=4.5V IC=9.5A Tj=25oC
V
GE
=4.5V IC=8A Tj= 150oC
V
GE
0.6
1.0
1.5
1.4
1.25
2.4
2.0
2.0
DYNAMIC
µ
µA
V
V
V
V
V
A
Symbol Parameter Test Conditions Min. Typ. M ax. U nit
g
Forward
fs
VCE=25 V IC=8A Tj=25oC7 12 S
Tr ansc on duc tance
C
ies
C
oes
C
res
Input Capacitance
Out put Capacitance
Reverse Tr ansfer
VCE=25V f=1MHz VGE= 0 1800
120
19
2600
165
26
Capacit a nc e
Q
Gat e Charge VCE= 400 V IC=8A VGE=5V 30 nC
G
FUNCTIONALCHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. M ax. U nit
2/8
I
CL
E
E
Latc hing C ur r ent V
For ward Clamping
CF
Energy
Revers e Avalanche
AR
= 480 V dV/ dt = 200 V/µs
clamp
= 125oC
T
j
T
=55oCV
start
= 10 A L = 4 .2 mH - Single Pul s e
I
C
clamp
=480V
Energy
20 A
210 mJ
10 mJ
pF
pF
pF
STGB10N60L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. M ax. U nit
t
d(on)
(di/dt)
E
Delay T ime
Rise Ti me
t
r
Tur n-on Current Slope
on
Turn-on
on
VCC= 480 V IC=8A
V
=5V RG=1K
GE
VCC=480V IC=8A
=1K
R
G
=125oC
T
j
Ω
VGE=5V
Ω
0.7
1.9
5
2.5
Switching Losses
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. U nit
t
tr(v
E
off
t
tr(v
E
off
(•)Pulse width limited by safe operatingarea
(∗) Pulsed: Pulse duration= 300µs, duty cycle 1.5%
(**)Losses Include AlsoThe Tail(Jedec Standardization)
Cross-Over Time
c
Off Voltage Rise Time
)
off
Fall T ime
t
f
(**)
Turn-off Switching Loss
Cross-Over Time
c
Off Voltage Rise Time
)
off
Fall T ime
t
f
(**)
Turn-off Switching Loss
V
=480V IC=8A
CC
=1KΩ VGE=5V
R
GE
T
=25oC
j
V
=480V IC=8A
CC
=1KΩ VGE=5V
R
GE
= 125oC
T
j
4
2.5
1.5
9.0
6
3.3
2.5
10.8
µs
s
µ
A/µs
mJ
s
µ
µs
s
µ
mJ
s
µ
µs
s
µ
mJ
SafeOperatingArea ThermalImpedance
3/8
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