SGS Thomson Microelectronics STF92 Datasheet
STF92
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
■ SILICON EPI TAX IA L PLANAR PN P HIGH
VOLTAGE TRANSISTOR
■ MINIATURE SOT-89 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE AND REEL PACKING
■ THE NPN COM PLE M ENT A RY TY P E IS
STF42
APPLICATIONS
■ VIDEO AMPLIFIER CIRC UITS (RGB
CATHODE CURRENT CONTROL)
■ TELEPHONE WIRELINE INTERFACE (HOOK
SWITCHES, DIALER CIRCUITS)
INTER NAL SCH E M ATI C DIAG RA M
May 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (IE = 0) -300 V
V
CEO
Collector-Emitter Voltage (IB = 0) -300 V
V
EBO
Emitter-Base Voltage (IC = 0) -5 V
I
C
Collector Current -0.1 A
I
CM
Collector Peak Current -0.2 A
P
tot
Total Dissipation at TC = 25 oC 1.3 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
Type Marking
STF92 692
®
SOT-89
1/4
THERMAL DATA
R
thj-amb
• Thermal Resistance Junction-Ambient Max 96.1
o
C/W
• Device mounted on a PCB area of 1 cm
2
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -200 V
V
CB
= -200 V TC = 150 oC
V
CB
= -300 V
-10
-10
-100
nA
µA
µA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -5 V -50 nA
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= -100 µA
-300 V
V
(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -10 mA -300 V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= -100 µA
-5 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -30 mA IB = - 5 mA -0.6 V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
IC = -30 mA IB = - 5 mA -1.2 V
h
FE
∗ DC Current Gain IC = -30 mA VCE = -10 V 75
f
T
Transition Frequency IC = -15mA VCE = -10V f = 20 MHz 60 MHz
C
CBO
Collector-Base
Capacitance
IE = 0 VCB = -10 V f = 1 MHz 6 pF
C
EBO
Emitter-Base
Capacitance
IC = 0 VEB = -2 V f = 1 MHz 22 pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
STF92
2/4
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