SGS Thomson Microelectronics STF42 Datasheet
®
SMALL SIGNAL NPN TRANSI STOR
Type Marking
STF42 642
■ SILICON EPI TAX IA L PLANAR N PN HIGH
VOLTAGE TRANSISTOR
■ MINIATURE SOT-89 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE AND REEL PACKING
■ THE PNP COMPLEMENTARY TYPE IS
STF92
STF42
PRELIMINARY DATA
APPLICATIONS
■ VIDEO AMPLIFIER CIRC UITS (RGB
SOT-89
CATHODE CURRENT CONTROL)
■ TELEPHONE WIRELINE INTERFACE (HOOK
SWITCHES, DIALER CIRCUITS)
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 300 V
CBO
Collector-Emitter Voltage (IB = 0) 300 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 0.1 A
I
C
Collector Peak Current 0.2 A
CM
Total Dissipation at TC = 25 oC 1.3 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
May 2002
1/4
STF42
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm
• Thermal Resistance Junction-Ambient Max 96.1
thj-amb
o
2
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CBO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
Collector-Base
= 200 V
V
CB
V
= 200 V TC = 150 oC
CB
V
= 300 V
CB
= 5 V 50 nA
V
EB
= 100 µA
I
C
300 V
10
10
100
Breakdown Voltage
(I
= 0)
E
V
(BR)CEO
∗ Collector-Emitter
I
= 10 mA 300 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)EBO
Emitter-Base
= 100 µA
I
E
5V
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
IC = 30 mA IB = 5 mA 0.6 V
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = 30 mA IB = 5 mA 1.2 V
Saturation Voltage
h
∗ DC Current Gain IC = 30 mA VCE = 10 V 75
FE
f
C
CBO
Transition Frequency IC = 15 mA VCE = 10 V f = 20 MHz 60 MHz
T
Collector-Base
IE = 0 VCB = 10 V f = 1 MHz 6 pF
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = 2 V f = 1 MHz 22 pF
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
nA
µA
µA
2/4
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