SGS Thomson Microelectronics STF2222A Datasheet
STF2222A
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
■ SILICON EPI TAX IA L PLANAR N PN
TRANSISTOR
■ MINIATURE SOT- 89 PLAS TIC PA CKA GE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE & REEL PA C K ING
■ THE PNP COMPLEMENTARY TYPE IS
STF2907A
APPLICATIONS
■ WELL SUITABLE FOR PORT AB LE
EQUIPME NT
■ SMALL LOAD SW ITCH TR A NS IS TOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
February 2003
Type Marking
STF2222A 20F
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Emitter Voltage (IE = 0) 75 V
V
CEO
Collector-Emitter Voltage (IB = 0) 40 V
V
EBO
Emitter-Base Voltage (IC = 0) 6 V
I
C
Collector Current 0.6 A
I
CM
Collector Peak Current (tp < 5 ms) 0.8 A
P
tot
Total Dissipation at T
amb
= 25 oC 1.2 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
®
SOT-89
1/5
THERMAL DATA
R
thj-amb
• Thermal Resistance Junction-Ambient Max 104.1
o
C/W
• Device mounted on a PCB area of 1 cm2 .
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
Collector Cut-off
Current (V
BE
= -3 V)
V
CE
= 60 V 10 nA
I
BEX
Base Cut-off Current
(V
BE
= -3 V)
V
CE
= 60 V 20 nA
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 75 V
V
CB
= 75 V Tj = 150
o
C
10
10
nA
µA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 3 V 15 nA
V
(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= 10 mA 40 V
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= 10 µA
75 V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10 µA
6V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 150 mA IB = 15 mA
I
C
= 500 mA IB = 50 mA
0.3
1
V
V
V
BE(sat)
∗ Collector-Base
Saturation Voltage
IC = 150 mA IB = 15 mA
I
C
= 500 mA IB = 50 mA
0.6 1.2
2
V
V
h
FE
∗ DC Current Gain IC = 0.1 mA VCE = 10 V
I
C
= 1 mA VCE = 10 V
I
C
= 10 mA VCE = 10 V
I
C
= 150 mA VCE = 10 V
I
C
= 150 mA VCE = 1 V
I
C
= 500 mA VCE = 10 V
35
50
75
100
50
40
300
f
T
Transition Frequency IC = 20 mA VCE = 20V f = 100MHz 270 MHz
C
CBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz 4 8 pF
C
EBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V f = 1MHz 20 25 pF
NF Noise Figure I
C
= 0.1 mA VCE = 10 V f = 1 KHz
∆f = 200 Hz R
G
= 1 KΩ
4dB
h
ie
∗ Input Impedance VCE = 10 V IC = 1 mA f = 1 KHz
V
CE
= 10 V IC = 10 mA f = 1 KHz20.25
8
1.25KΩKΩ
h
re
∗ Reverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz
V
CE
= 10 V IC = 10 mA f = 1 KHz
8
4
10
-4
10
-4
hfe∗ Small Signal Current
Gain
VCE = 10 V IC = 1 mA f = 1 KHz
V
CE
= 10 V IC = 10 mA f = 1 KHz
50
75
300
375
h
oe
∗ Output Admittance VCE = 10 V IC = 1 mA f = 1 KHz
V
CE
= 10 V IC = 10 mA f = 1 KHz
5
25
35
200
µS
µS
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
STF2222A
2/5
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