SGS Thomson Microelectronics STE53NC50 Datasheet
STE53NC50
N-CHANNEL 500V - 0.070Ω - 53A ISOTOP
PowerMesh™II MOSFET
TYPE V
STE53NC50 500V < 0.08Ω 53 A
n
TYPICAL RDS(on) = 0.07 Ω
n
EXTREMELY HIGH dv /d t C APABILITY
n
100% AVALANCHE TESTED
n
NEW HIGH VOLTAGE BENCHMARK
n
GATE CHARGE MINIMIZED
DSS
R
DS(on)
I
D
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITH MODE POWER SUPPLI ES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
V
ISO
T
stg
T
j
(•)Pu l se width limited by safe operati ng area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(l)
Drain Current (pulsed) 212 A
Total Dissipation at TC = 25°C
Derating Factor 3.68 W/°C
Insulation Winthstand Voltage (AC-RMS) 2500 V
Storage Temperature – 65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD≤ 53A, di/dt≤1 00 A /µ s, VDD≤ 24V, Tj≤ T
500 V
500 V
53 A
33 A
460 W
jMAX
1/8May 2002
STE53NC50
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.272 °C/W
Rthc-h Thermal Resistance Case-heatsink with Conduct ive
Grease Applied
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
ID = 250 µA, VGS = 0 500 V
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ± 30V ±100 nA
GS
0.05 °C/W
53 A
1043 mJ
10 µA
100 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 27A
234V
0.07 0.08 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
ID= 15 A
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 1350 pF
Reverse Transfer
V
Capacitance
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
42 S
11.2 nF
115 pF
2/8
STE53NC50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
gs
gd
Turn-on Delay Time
Rise Time 70 ns
Total Gate Charge
g
Gate-Source Charge 46 nC
Gate-Drain Charge 150 nC
SWITCHING OFF
Symbol Param eter Test Conditions Min. Typ. Max. U nit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 38 ns
Cross-over Time 85 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limi ted by safe operating area.
(2)
Source-drain Current 53 A
Source-drain Current (pulsed) 212 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charg e 17.86 µC
Reverse Recovery Curren t 47 A
= 250V, ID = 26.5A
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 400V, ID = 53A,
DD
V
= 10V
GS
V
= 400V, ID = 53A,
DD
RG= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 53A, VGS = 0
I
= 53A, di/dt = 100A/µs,
SD
V
= 70V, Tj = 150°C
DD
(see test circuit, Figure 5)
46 ns
310 434 nC
45 ns
1.6 V
760 ns
Safe Operating Area Thermal Impedence
3/8
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