SGS Thomson Microelectronics STE53NA50 Datasheet

STE53NA50

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STE53 NA 5 0 500 V < 0.085 Ω 53 A

■ TYPICALR

■ HIGH CURRENTPOWER MODULE

■ AVALANCHERUGGEDTECHNOLOGY

■ VERYLARGE SOA - LARGE PEAKPOWER

DS(on)

=0.075 Ω

CAPABILITY

■ EASY TO MOUNT

■ SAME CURRENTCAPABILITYFOR THE

TWOSOURCE TERMINALS

■ EXTREMELY LOW Rth (Junction to case)

■ VERYLOW INTERNAL PARASITIC

INDUCTANCE

■ ISOLATEDPACKAGEULRECOGNIZED

APPLICATIONS

■ SMPS & UPS

■ MOTORCONTROL

■ WELDINGEQUIPMENT

■ OUTPUTSTAGE FOR PWM, ULTRASONIC

CIRCUITS

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

DM

P

T

V

(•) Pulsewidth limited by safe operating area

February 1998

Drain-sourc e V ol t ag e (VGS=0) 500 V

DS

DGR Drain- g at e Voltage ( R

Gate- source Voltage ± 30 V

GS

I

Drain Current (con t inuous) a t Tc=25oC53A

D

I

Drain Current (con t inuous) a t Tc=100oC33A

D

=20kΩ)

GS

500 V

(•) Drain Current (pulsed) 212 A

Total Dissipation at Tc=25oC460W

tot

Derating Fa c tor 3.68 W/ St orage T emperat ure -55 to 150

stg

T

Max. O pera ting Junction T emperat ure 150

j

Insulation Withhstand Voltage (AC-RMS) 2500 V

ISO

o

C

o

C

o

C

1/7

STE53NA50

THERMAL DATA

R

thj-case

R

thc-h

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Value Uni t

I

AR

E

Ther mal Resist ance Junctio n-case Max Ther mal Resist ance Case-heat si nk With Cond uctive Gr ease Ap plied Max

Avalanche Cur rent, Repet it i v e or Not-Re petitive (pulse w idth limited by T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

0.27

0.05

26 A

1014 mJ

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Un it

V

(BR)DSS

Drain-sourc e

ID=1mA VGS= 0 500 V

Breakdown V oltage

I

DSS

GSS

Zer o Gat e Vo lt age Drain Current (V

GS

Gat e-body Leaka ge Current (V

DS

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

= ± 30 V

V

GS

100

1000µAµA

± 400 nA

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Un it

V

GS(th )

Gate Threshold

VDS=VGSID=1mA 2.25 3 3.75 V

Voltage

R

DS(on)

Stati c Drain-so urce On

VGS=10V ID= 27 A 0.075 0.085 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

53 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Un it

g

(∗)Forward

fs

Tr ansconductanc e

C

Input Capac i t an c e

iss

Out put Capa c itance

oss

Reverse Transf er

rss

Capa cit an c e

VDS>I

D(on)XRDS(o n)MAXID

=27A 25 S

VDS=25V f=1MHz VGS=0 13

1500

450

16

2000

650

nF pF pF

2/7

STE53NA50

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Condition s Min. Typ. Max. Un it

t

d(on)

t

r

Turn-on Time Rise Tim e

VDD=250V ID=27A

=4.7 Ω VGS=10V

R

G

57 92

(see test circuit, figure 1)

Q

Total Gate Charge

g

Gat e-Sour ce Cha rge

gs

Gate-Drain Charge

gd

VDD=400V ID=53A VGS= 10 V 470

54

219

SWITCHINGOFF

Symbol Parameter Test Condition s Min. Typ. Max. Un it

t

r(Voff)

t

Of f - voltage Rise Time Fall Time

f

Cross-ov er Time

c

VDD=400V ID=53A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 3)

105

36

145

SOURCE DRAIN DIODE

Symbol Parameter Test Condition s Min. Typ. Max. Un it

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 % (•) Pulse widthlimited by safeoperating area

Source-drain Curre nt

(•)

Source-drain Curre nt (pulsed)

(∗) Forwar d On Vo lt age ISD=53A VGS=0 1.6 V

Reverse Recov er y

rr

Time Reverse Recov er y

rr

= 53 A di/d t = 100 A/µs

I

SD

=100V Tj=150oC

V

R

(see test circuit, figure 3)

1000

31.5 Charge Reverse Recov er y

63

Current

80

130

658 nC

145

50

205

53

212

ns ns

nC nC

ns ns ns

A A

ns

µC

A

Safe Operating Areafor ThermalImpedance

3/7