SGS Thomson Microelectronics STE38NB50F Datasheet
STE38NB50F
N - CHANNEL 500V- 0.11
TYPE V
DSS
ST E38NB50F 500 V < 0 . 14 Ω 38 A
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100%AVALANCHETESTED
■ LOW INTRINSICCAPACITANCE
■ GATECHARGE MINIMIZED
■ REDUCEDVOLTAGESPREAD
DS(on)
= 0.11 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronicshas designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switchingcharacteristics.
R
DS(on)
I
D
Ω
- 38A - ISOTOP
PowerMESH MOSFET
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SWITCHMODE POWER SUPPLY (SMPS)
■ DC-AC CONVERTERFOR WELDING
EQUIPMENTANDUNINTERRUPTABLE
POWERSUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
DM
P
dv/dt
T
(•) Pulse width limited by safe operating area (1)ISD≤38 A, di/dt ≤ 200 A/µs, VDD≤ V
December 1999
Drain-source Volt age (VGS= 0) 500 V
DS
Drain- g at e Voltag e (RGS=20kΩ) 500 V
DGR
Gate-s ource Voltage
GS
I
Drain C urrent (continu ous ) at Tc=25oC38A
D
I
Drain C urrent (continu ous ) at Tc=100oC24A
D
30 V
±
(•) Drain C urrent (pulsed) 152 A
Tot al Diss i pat ion at Tc=25oC 400 W
tot
Derat ing Fact or 3.2 W/
(1) Peak Diode R ecov e ry volt ag e slope 4.5 V/ns
Sto rage Temper at ur e -65 to 150
stg
T
Max. Oper a t ing Junction Temperature 150
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STE38NB50F
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistance J unction- ca se Max
Ther mal Resistance J unction- am bie nt Max
Ther mal Resistance C ase-sink Ty p
Maximum Lead T e m perature For So lder ing Purpose
l
Avalanche Current, Repetitive or Not-Repetiti ve
(pulse width limited by T
Single Pul s e Avalanc he E ner gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.31
30
0.1
300
38 A
1200 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 500 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 30 V
GS
10
100
100 nA
±
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 345V
Sta t ic Drain-s ource On
VGS=10V ID= 1 9 A 0.11 0.14
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
38 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t anc e
iss
Out put Capac it ance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=19A 27 S
VDS=25V f=1MHz VGS= 0 5900
880
80
µ
µA
Ω
pF
pF
pF
A
2/8
STE38NB50F
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise Tim e
VDD=250V ID=19A
R
=4.7
G
Ω
VGS=10V
45
35
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charg e
gs
Gate-Drain Charge
gd
VDD= 400 V ID=38A VGS= 10 V 140
38
61
196 nC
SWITCHING OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall T ime
f
Cross-over Time
c
VDD=400V ID=38A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
28
30
60
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
I
V
I
SDM
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current
38
152
(pulsed)
(∗)ForwardOnVoltage ISD=38A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 38 A di/dt = 100 A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
715
11.8
Charge
Reverse Recovery
33
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SafeOperating Area ThermalImpedance
3/8
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