SGS Thomson Microelectronics STE38NB50 Datasheet

®

STE38NB50

N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP

PowerMESH MOSFET

TYPE V

DSS

R

DS(on)

I

D

STE38NB50 500 V < 0.13 Ω 38 A

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ ± 30V GATE TO SOURCE VOLTA GE RATING

■ 100% AVALANCHE TESTED

■ LOW INTRINSIC CAPACITANCE

■ GATE CH ARGE MINIMIZED

■ REDUCED VOLTAGE SPRE AD

DS(on)

= 0.11 Ω

DESCRIPTIO N

Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristic s.

APPLICATIONS

■ HIGH CURRENT, HIGH SPE ED SWI TCHING

■ SWITCH MODE P OW ER SUP P LY (S MP S)

■ DC-AC CONVERTER FOR W ELDING

EQUIPMENT AND UNINTERRUPTABLE POWER SU PPLY AND MOTOR DRIV E

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOL UT E MAXIMU M RATINGS

Symbol Parameter Value Unit

V

I

DM

P

dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns

T

(•) Pulse width limited by safe operating area (1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V

June 1998

Drain-source Voltage (VGS = 0) 500 V

DS

Drain- gate Voltage (RGS = 20 kΩ) 500 V

DGR

Gate-source Voltage ± 30 V

GS

I

Drain Current (continuous) at Tc = 25 oC38A

D

I

Drain Current (continuous) at Tc = 100 oC24A

D

(•) Drain Current (pulsed) 152 A

Total Dissipation at Tc = 25 oC 400 W

tot

Derating Factor 3.2 W/

Storage Temperature -65 to 150

stg

T

Max. Operating Junction Temperature 150

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

o

C

1/8

STE38NB50

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-si n k

T

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose

l

AVALANCHE CHARACTERI S TICS

Symbol Parameter Max Value Unit

I

AR

E

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

max)

j

DD

= 50 V)

0.31 30

0.1

300

38 A

1200 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID = 250 µA V

= 0 500 V

GS

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125 oC

DS

= ± 30 V ± 100 nA

V

GS

10

100

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage V Static Drain-source On

= VGS ID = 250 µA 345V

DS

VGS = 10 V ID = 19 A 0.11 0.13 Ω

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

38 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗) Forward

fs

Transconductance

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID = 19 A 18 20 S

80

9100 1235

104

= 0 7000

GS

950

µA µA

pF pF pF

2/8

STE38NB50

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING O N

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time Rise Time

V

= 250 V ID = 19 A

DD

R

= 4.7 Ω VGS = 10 V

G

46 32

(see test circuit, figure 3)

Q Q Q

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

= 400 V ID = 38 A V

DD

= 10 V 159

GS

35 67

SWITCHING O F F

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

Off-voltage Rise Time Fall Time

t

f

Cross-over Time

c

V

= 400 V ID = 38 A

DD

R

= 4.7 Ω VGS = 10 V

G

(see test circuit, figure 5)

56 53

120

SOURCE DRAIN DIO DE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current (pulsed)

(∗) Forward On Voltage ISD = 38 A VGS = 0 1.6 V

Reverse Recovery

rr

Time Reverse Recovery

rr

I

= 38 A di/dt = 100 A/µs

SD

V

= 100 V Tj = 150 oC

DD

(see test circuit, figure 5)

950

12 Charge Reverse Recovery

25 Current

64 45

223 nC

78 74

168

38

152

ns ns

nC nC

ns ns ns

A A

ns

µC

A

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Safe Operating Area Thermal Impedance

3/8