SGS Thomson Microelectronics STE26NA90 Datasheet
STE26NA90
N - CHANNEL 900V - 0.25Ω - 26A - ISOTOP
FAST POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST E26NA90 900 V < 0. 3 Ω 26 A
■ TYPICALR
30V GATE TO SOURCEVOLTAGERATING
■
±
■ 100%AVALANCHETESTED
■ LOW INTRINSICCAPACITANCE
■ GATECHARGE MINIMIZED
■ REDUCEDVOLTAGESPREAD
DS(on)
= 0.25 Ω
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SWITCHMODE POWER SUPPLY (SMPS)
■ DC-AC CONVERTERFOR WELDING
EQUIPMENTANDUNINTERRUPTABLE
POWERSUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
DM
P
T
V
(•) Pulsewidth limited by safeoperating area
October 1998
Drain-source V oltage (VGS= 0) 900 V
DS
Drain- gat e V oltage (RGS=20kΩ) 900 V
DGR
Gate-s ource Voltage
GS
I
Drain Current (cont inu ous) at Tc=25oC26A
D
I
Drain Current (cont inu ous) at Tc=100oC16.2A
D
30 V
±
(•) Drain Current (pulsed) 104 A
Tot al Dissipat ion at Tc=25oC 450 W
tot
Derat ing Fac tor 3.6 W/
Sto rage T emperature -55 to 150
stg
T
Max. Opera t ing Junc t ion Tem perature 150
j
Ins ulat i on Wi t hst an d V olt ag e ( AC-RMS) 2500 V
ISO
o
C
o
C
o
C
1/8
STE26NA90
THERMAL DATA
R
thj-case
R
thc-h
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Case-heatsink Wit h Conductive
Gr ease Applied Max
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Puls e Av alan che E nergy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.27
0.05
13 A
3000 mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=500µAVGS= 0 900 V
Break dow n Vo ltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
= ± 30 V ± 200 nA
V
GS
250
1000
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=V
Sta t ic Dr ain -s ource O n
VGS=10V ID= 13 A 0.25 0.3 Ω
GS
ID=1mA 2.25 3 3.75 V
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
26 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input C apac i t ance
iss
Out put Capacit ance
oss
Reverse T r ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )max
ID=13A 15 S
VDS=25V f=1MHz VGS=0 13600
1130
270
17700
1470
350
µA
µ
pF
pF
pF
A
2/8
STE26NA90
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise T i me
VDD=450V ID=12A
R
=4.7
G
Ω
VGS=10V
40
52
56
73
(see test circuit, figure 3)
Q
Q
Q
Tot al G at e Char ge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 720 V ID=26A VGS= 10 V 470
43
226
660 nC
SWITCHING OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off-volt age Rise T ime
Fall T ime
f
Cross-over T ime
c
VDD=720V ID=26A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
108
25
145
152
35
203
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
I
SDM
V
I
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current
26
104
(pulsed)
(∗)ForwardOnVoltage ISD=26A VGS=0 1.6 V
Reverse Re covery
rr
Time
Reverse Re covery
rr
ISD= 26 A di/ dt = 100 A /µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
1.3
38
Charge
Reverse Re covery
58
Current
ns
ns
nC
nC
ns
ns
ns
A
A
µ
µ
A
s
C
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SafeOperating Area ThermalImpedance
3/8
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