SGS Thomson Microelectronics STE180NE10 Datasheet
STE180NE10
N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST E180NE10 100 V < 6 mΩ 180 A
■ TYPICALR
■ 100%AVALANCHETESTED
■ LOW INTRINSICCAPACITANCE
■ GATECHARGE MINIMIZED
■ REDUCEDVOLTAGESPREAD
DS(on)
= 4.5 mΩ
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transistor shows extremely high packingdensity forlow
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ SMPS& UPS
■ MOTORCONTROL
■ WELDINGEQUIPMENT
■ OUTPUTSTAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area (1)ISD≤
November 1999
Drain-source Volt age (VGS= 0) 100 V
DS
Drain- gate Voltag e (RGS=20kΩ) 100 V
DGR
Gate-s ource Voltage
GS
I
Drain Current (co nt inuous) at Tc=25oC 180 A
D
I
Drain Current (co nt inuous) at Tc=100oC 119 A
D
20 V
±
(•) Drain Current (pu lsed) 540 A
Tot al Di ss i pat ion at Tc=25oC 360 W
tot
Derat ing Fact or 2.88 W/
Ins ulat i on Withst an d Volt age ( AC-RMS ) 2500 V
ISO
Sto rage Temper at ur e -55 t o 150
stg
T
Max. O per a t ing Junction Temperature 150
j
180
Α,
di/dτ ≤ 200 A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STE180NE10
THERMAL DATA
R
thj-case
R
thc-h
AVALANCHE CHARACTERISTICS
Symbol Parameter Max V alue Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Case-heatsink With conduct iv e
Gr ease A pplied Max
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single P ul s e Avalan c he Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
0.347
0.05
60 A
720 mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=1mA VGS= 0 100 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur rent (V
GS
Gat e- bod y L eak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
4
40
400 nA
±
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=1mA 234V
Sta t ic Drain -s ource On
VGS=10V ID=90A 4.5 6 m
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
180 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t anc e
iss
Out put Capacitanc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=80A 30 S
VDS=25V f=1MHz VGS=0 21
2.5
0.9
µ
µA
nF
nF
nF
A
Ω
2/8
STE180NE10
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
d(on)
Tur n-on Delay Time
Rise Ti m e
t
r
VDD=50V ID=90A
R
=4.7
G
Ω
VGS=10V
35
100
(Resis t iv e Loa d, see fig. 3 )
Q
Q
Q
Tot al Gat e Charge
g
Gat e- Source Charg e
gs
Gate-Drain Charge
gd
VDD=80V ID=180A VGS= 10 V 142
37
60
185 nC
SWITCHINGOFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
d(on)
Tur n-of f D ela y Time
t
Fall T ime
r
VDD=50V ID=90A
=4.7 Ω VGS=10V
R
G
110
100
(Resis t iv e Loa d, see fig. 3 )
t
r(Voff)
t
t
Off-voltage Rise Time
Fall T ime
f
Cross-over T ime
c
VDD=80V ID=180A
=4.7 Ω VGS=10V
R
G
(Indu ct iv e Load, see fig. 5)
100
50
92
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
I
SDM
V
I
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current
180
540
(pulsed)
(∗)ForwardOnVoltage ISD= 180 A VGS=0 1.5 V
Reverse Recover y
rr
Time
Reverse Recover y
rr
ISD= 180 A di/dt = 100 A /µs
=50V Tj= 150oC
V
DD
(see test circuit, fig. 5)
170
850
Charge
Reverse Recover y
10
Current
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
A
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SafeOperating Area ThermalImpedance
3/8
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