SGS Thomson Microelectronics STE15NA100 Datasheet
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STE15NA100 1000 V < 0.77 Ω 15 A
R
DS(on)
I
D
STE15NA100
PRELIMINARY DATA
■ TYPICAL R
■ HIGH CURRENT POWER MODULE
■ AVALANCHE RUGGED TECHNOLOGY
■ VERY LARGE SOA - LARGE PEAK POWER
DS(on)
= 0.65 Ω
CAPABILITY
■ EASY TO MOUNT
■ SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
■ EXTREMELY LOW Rth (Junction to case)
■ VERY LOW INTERNAL PARASITIC
INDUCTANCE
■ ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS
■ SMPS & UPS
■ MOTOR CONT RO L
■ WELDING EQUIPMENT
■ OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
V
(•) Pulse width limited by safe operating area
February 1998
Drain-source Voltage (VGS = 0) 1000 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC15A
D
I
Drain Current (continuous) at Tc = 100 oC9.5A
D
1000 V
(•) Drain Current (pulsed) 60 A
Total Dissipation at Tc = 25 oC 300 W
tot
Derating Factor 2.4 W/
Storage Temperature -55 to 150
stg
T
Max. Operating Junction Temperature 150
j
Insulation Withhstand Voltage (AC-RMS) 2500 V
ISO
o
C
o
C
o
C
1/5
STE15NA100
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x, δ < 1%)
j
DD
= 50 V)
0.27
0.05
TBD A
TBD mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 500 µA V
D
GS
= 0
1000 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
=0.8x Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
250
1000µAµA
± 200 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 1mA 2.25 3 3.75 V
DS
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID = 7.5 A 0.65 0.77 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
15 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1.0 MHz V
ID = 7.5 A 12 S
= 0 7
GS
600
150
9.1
780
195
nF
pF
pF
2/5
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