SGS Thomson Microelectronics STDID5B Datasheet
®
N - CHANNEL 55V - 0.1 Ω - 12A TO-252
TYPE V
DSS
STDID5B 55 V < 0.12 Ω 12 A
■
TYPICAL R
■
APPLICATION ORIENTED
DS(on)
= 0.1 Ω
CHARACTERIZATION
■
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
R
DS(on)
I
D
STDID5B
STripFET POWER MOSFET
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix "T4")
APPLICATIONS
■
DC MOTOR CONTROL
■
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
D
I
DM
P
E
AS
T
(•) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0) 55 V
DS
Drain- gate Voltage (RGS = 20 kΩ)55V
DGR
Gate-source Voltage ± 20 V
GS
(*) Drain Current (continuous) at Tc = 25 oC12A
I
Drain Current (continuous) at Tc = 100 oC8A
D
(•) Drain Current (pulsed) 48 A
Total Dissipation at Tc = 25 oC35W
tot
Derating Factor 0.23 W/
(1)
Single Pulse Avalanche Energy 25 mJ
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
(1) starting T
o
C, ID =12A , VDD = 30V New R
= 25
j
spec. starting from July ’98
DS(on)
o
C
o
C
o
C
May 2000
1/6
STDID5B
THERMAL DATA
R
thj-case
R
thj-amb
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
l
4.3
100
275
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 55 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
= ± 20 V ± 100 nA
V
GS
1
10
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
Static Drain-source On
= VGS ID = 250 µA234V
DS
VGS = 10 V ID = 9.6 A 0.1 0.12 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
12 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 10 A 4 S
= 0 V 360
GS
55
25
µA
µA
pF
pF
pF
2/6
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