SGS Thomson Microelectronics STD9N10 Datasheet

STD9N10

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STD9N10 100 V < 0.27 Ω 9A

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100% AVALANCHETESTED

■ REPETITIVEAVALANCHEDATAAT 100

■ LOW GATE CHARGE

■ HIGH CURRENTCAPABILITY

o

■ 175

■ APPLICATIONORIENTED

COPERATINGTEMPERATURE

DS(on)

=0.23 Ω

o

C

CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER

PACKAGEIN TUBE(SUFFIX ”-1”)

■ SURFACE-MOUNTINGDPAK (TO-252)

POWERPACKAGE IN TAPE & REEL (SUFFIX”T4”)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDANDRELAY DRIVERS

■ REGULATORS

■ DC-DC& DC-AC CONVERTERS

■ MOTORCONTROL,AUDIO AMPLIFIERS

■ AUTOMOTIVEENVIRONMENT (INJECTION,

ABS, AIR-BAG,LAMPDRIVERS,Etc.)

3

2

IPAK

TO-251

(Suffix”-1”)

1

(Suffix ”T4”)

1

DPAK

TO-252

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

DGR

V

I

DM

P

T

(•) Pulse width limitedby safe operating area

March 1996

Drain-source Voltage (VGS= 0) 100 V

DS

Drain- gate Voltage (RGS=20kΩ) 100 V Gate-source Voltage ± 20 V

GS

I

Drain Current (c ont inuo us) a t Tc=25oC9A

D

I

Drain Current (c ont inuo us) a t Tc=100oC6A

D

(•) Drain Current (puls ed) 36 A

Total Dissipat i on at Tc=25oC45W

tot

Derat ing Factor 0.3 W/ Stora ge Temperature -65 to 175

stg

T

Max. Operat ing Junction T emperatur e 175

j

o o

o

C C C

1/10

STD9N10

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symb o l Para met er Max V alue Uni t

I

AR

E

I

AR

Ther mal Resistance Junct ion-case Max Ther mal Resistance Junct ion-ambient Max Ther mal Resistance Case-s i nk Typ Maximum Lead Tempera t ure For Solder ing Purpo se

l

Avalanche Current , Repet it iv e or Not-Repe t it ive (pulse width limit ed by T

Single Pu lse Avalanc he E nerg y

AS

(starti ng T Repetitive Avalanche E n er gy

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limit ed by T

max, δ <1%)

j

max, δ <1%)

j

Avalanche Current , Repet it iv e or Not-Repe t it ive

=100oC, pulse wid t h limited by Tjmax, δ <1%)

(T

c

3.33 100

1.5

275

9A

30 mJ

7mJ

6A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µAVGS= 0 100 V

Break dow n Voltage

I

DSS

GSS

Zero Gate Voltage Drain Current (V

GS

Gat e- bod y Leaka ge Current (V

DS

=0)

=MaxRating

V

DS

V

=MaxRatingx0.8 Tc= 125oC

DS

V

= ± 20 V ± 100 nA

GS

250

1000µAµA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th )

R

DS(on)

I

D(on)

Gat e Thres hold Volt age VDS=VGSID=250µA234V St at ic Drain-source On

Resistance

VGS= 10V ID=4.5A

= 10V ID=4.5A Tc=100oC

V

GS

On S t ate Drain Current VDS>I

D(on)xRDS(on)max

0.23 0.27

0.54

9A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on ductance

C

Input Capac it an ce

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=4.5A 2 4 S

VDS=25V f=1MHz VGS= 0 330

90 25

450 120

40

Ω Ω

pF pF pF

2/10

STD9N10

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time Rise Time

VDD=50V ID=4.5A

=4.7 Ω VGS=10V

R

G

(see t est circuit, figure 3)

(di/dt)

Tur n-on C urr ent Slope VDD=80V ID=9A

on

R

=4.7 Ω VGS=10V

G

(see t est circuit, figure 5)

Q

Tot al Gat e Charge

g

Gate-Source Charge

gs

Gat e- Drain Charge

gd

VDD=80V ID=9A VGS=10V 15

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise T ime

t

Fall T ime

f

Cross-over Time

c

VDD=80V ID=9A

=4.7 Ω VGS=10V

R

G

(see t est circuit, figure 5)

SOURCE DRAIN DIODE

10 40

15 60

440 A / µ s

25 nC 6 5

15 25 50

25

35

70

ns ns

nC nC

ns ns ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

9

36

(pulsed)

(∗)ForwardOnVoltage ISD=9A VGS=0 1.5 V

V

SD

t

Q

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 9 A di/ dt = 100 A/µs

=20V Tj= 150oC

V

DD

(see t est circuit, figure 5)

80

0.2

Charge

I

RRM

Reverse Recovery

5

Current

(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 % (•) Pulse width limited by safeoperating area

Safe Operating Area ThermalImpedance

A A

ns

µC

A

3/10