SGS Thomson Microelectronics STD7NS20-1 Datasheet
STD7NS20
STD7NS20-1
N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK
MESH O VERL AY™ MOSFET
PRELIMINARY DATA
TYPE V
STD7NS20
STD7NS20-1
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AV ALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
DS
DSS
200 V
200 V
(on) = 0.35 Ω
R
DS(on)
< 0.40 Ω
< 0.40 Ω
I
D
7A
7A
REEL
DESCRIPTION
Using the l ate st high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performance. The new patented STrip layout coupled with the Company’s proprietary edge termination s t ruc ture, makes it suitable in c ov erte rs for
lighting applications.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
1
DPAK
TO-252
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns
T
stg
T
j
(•)Pulse width limited by safe operating area
June 2003
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
200 V
200 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C
()
Drain Current (pulsed) 28 A
Total Dissipation at TC= 25°C
7A
4.4 A
45 W
Derating Factor 0.37 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD≤ 7A, di/dt≤300 A/µs, VDD≤ V
(BR)DSS
,Tj≤T
jMAX
1/8
STD7NS20 / STD7NS20-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.7 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 275 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID=IAR,VDD=50V)
j
ID= 250 µA, VGS= 0 200 V
7A
60 mJ
Breakdown Voltage
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±20V ±100 nA
GS
1µA
10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 3.5 A
= 250µA
234V
0.35 0.40 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 90 pF
Reverse Transfer
Capacitance
D(on)xRDS(on)max,
ID= 3.5 A
V
=25V,f=1MHz,VGS=0
DS
4S
540 pF
35 pF
2/8
STD7NS20 / STD7NS20-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 15 ns
Total Gate Charge
Gate-Source Charge 7.5 nC
Gate-Drain Charge 9 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 7 A
(2)
Source-drain Current (pulsed) 28 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 0.95 µC
Reverse Recovery Current 11 A
=100V,ID= 3.5 A
DD
R
= 4.7Ω VGS=10V
G
(see test circuit, Figure 3)
V
=160V,ID=18A,
DD
=10V
V
GS
V
= 160 V, ID=7A,
clamp
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)
ISD= 7 A, VGS=0
I
= 7 A, di/dt = 100A/µs
SD
VDD=50V,Tj= 150°C
(see test circuit, Figure 5)
10 ns
31 45 nC
12
12
25
1.5 V
170 ns
ns
ns
ns
3/8
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