SGS Thomson Microelectronics STD7NS20 Datasheet
STD7NS20
N - CHANNEL 200V - 0.35Ω - 7A - DPAK
MESH OVERLAY MOSFET
PRELIMINARY DATA
■
TYPICAL R
DS(on)
= 0.35
Ω
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
■
FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
■
HIGH CURRENT SWITCHING
■
UNINTERRUPTIBLE PO WER S UPPLY (UPS)
■
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
®
INTERNAL SCHEMATIC DIAGRAM
November 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0) 200 V
V
DGR
Drain- gate Voltage (RGS = 20 kΩ)
200 V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at Tc = 25 oC7A
I
D
Drain Current (continuous) at Tc = 100 oC4.4A
I
DM
(•) Drain Current (pulsed) 28 A
P
tot
Total Dissipation at Tc = 25 oC45W
Derating Factor 0.37 W/
o
C
dv/dt(
1
) Peak Diode Recovery voltage slope 5 V/ns
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulse width limited by safe operating area (1) ISD ≤ 7A, di/dt ≤ 300 A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Dat asheet
TYPE V
DSS
R
DS(on)
I
D
STD7NS20 200 V < 0.40 Ω 7 A
1
3
DPAK
TO-252
(Suffix "T4")
1/5
THERMAL DATA
R
thj-case
Rthj-am b
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.7
100
1.5
275
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
7A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 oC, ID = IAR, V
DD
= 50 V)
60 mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA V
GS
= 0
200 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating Tc = 125 oC
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20 V
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS ID = 250 µA
234V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10V ID =3.5 A 0.35 0.40 Ω
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max
V
GS
= 10 V
7A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
VDS > I
D(on)
x R
DS(on)max
ID = 3.5 A 3 4 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0 540
90
35
700
120
50
pF
pF
pF
STD7NS20
2/5
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