STD7NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
■ TYPICALR
DS(on)
=0.3Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGEMINIMIZED
■ FOR TROUGH-HOLE VERSIONCONTACT
SALESOFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
INTERNAL SCHEMATIC DIAGRAM
December 1997
1
3
DPAK
TO-252
(Suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
DS
Drain-source Voltage (VGS=0) 200 V
V
DGR
Drain- gate Voltage (RGS=20kΩ)
200 V
V
GS
Gat e- source Vo lt age ± 30 V
I
D
Drain Cur rent ( contin uous ) a t Tc=25oC7A
I
D
Drain Cur rent ( contin uous ) a t Tc=100oC5A
I
DM
(•) Dra in Cur rent ( pul s ed ) 28 A
P
tot
Tot al Dissipation at Tc=25oC55W
Derating Factor 0.44 W/
o
C
dv/dt(
1) Peak Diode Re covery vo ltage slope 5.5 V/ns
T
stg
Sto rage Tempe rature -65 to 150
o
C
T
j
Max. Operatin g Ju nct ion T e m peratur e 150
o
C
(•) Pulse width limited by safe operating area (1)ISD≤7A, di/dt ≤ 200 A/µs, VDD≤ V
(BR)DSS
,Tj≤T
JMAX
TYPE V
DSS
R
DS(on)
I
D
ST D7 NB20 200 V < 0. 4 0 Ω 7A
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