SGS Thomson Microelectronics STD7NB20 Datasheet

STD7NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
TYPICALR
DS(on)
=0.3
EXTREMELY HIGH dv/dt CAPABILITY
VERYLOW INTRINSIC CAPACITANCES
GATECHARGEMINIMIZED
FOR TROUGH-HOLE VERSIONCONTACT
SALESOFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R
DS(on)
per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS
SWITCHMODEPOWER SUPPLIES(SMPS)
DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTORDRIVE
INTERNAL SCHEMATIC DIAGRAM
December 1997
1
3
DPAK
TO-252
(Suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
DS
Drain-source Voltage (VGS=0) 200 V
V
DGR
Drain- gate Voltage (RGS=20kΩ)
200 V
V
GS
Gat e- source Vo lt age ± 30 V
I
D
Drain Cur rent ( contin uous ) a t Tc=25oC7A
I
D
Drain Cur rent ( contin uous ) a t Tc=100oC5A
I
DM
() Dra in Cur rent ( pul s ed ) 28 A
P
tot
Tot al Dissipation at Tc=25oC55W Derating Factor 0.44 W/
o
C
dv/dt(
1) Peak Diode Re covery vo ltage slope 5.5 V/ns
T
stg
Sto rage Tempe rature -65 to 150
o
C
T
j
Max. Operatin g Ju nct ion T e m peratur e 150
o
C
() Pulse width limited by safe operating area (1)ISD≤7A, di/dt ≤ 200 A/µs, VDD≤ V
(BR)DSS
,TjT
JMAX
TYPE V
DSS
R
DS(on)
I
D
ST D7 NB20 200 V < 0. 4 0 7A
1/8
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sin k
T
l
Ther mal Resist ance Junctio n-c a s e Max Ther mal Resist ance Junctio n-ambient Max Ther mal Resist ance Case-sink T yp Maximum Lead Temperat ure For Soldering Purpose
2.27 100
1.5
275
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
Avalanche C urr e nt , Rep et it ive or Not-Re petitive (pulse width limited by T
j
max, δ <1%)
7A
E
AS
Single Pulse Avalanche Energy (starting T
j
=25oC, ID=IAR,VDD=50V)
100 mJ
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwisespecified)
OFF
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
V
(BR)DSS
Drain-sourc e Breakdown V oltage
I
D
=250µAVGS=0
200 V
I
DSS
Zer o Gat e V o lt age Drain Current (V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc=125oC
1
10
µA µA
I
GSS
Gat e-body Leaka ge Current (V
DS
=0)
V
GS
= ± 30 V
± 100 nA
ON ()
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
V
GS(th )
Gate Threshold Voltage
V
DS=VGSID
=250µA
345V
R
DS(on)
Stati c D rain-source On Resistance
VGS=10V ID=3.5 A 0.30 0.40
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
7A
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
g
fs
()Forward
Tr ansconductanc e
VDS>I
D(on)xRDS(on)maxID
=3.5 A 2 3 S
C
iss
C
oss
C
rss
Input Capac i t an c e Out put C apa c itance Reverse Transf er Capa cit an c e
VDS=25V f=1MHz VGS= 0 470
135
22
650 190
30
pF pF pF
STD7NB20
2/8
ELECTRICAL CHARACTERISTICS (continued) SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
t
d(on)
t
r
Turn-on Time Rise Time
VDD=100V ID=5A R
G
=4.7 VGS=10V
(see test circuit, figure 3)
10 15
14 20
ns ns
Q
g
Q
gs
Q
gd
Total Gate Charge Gat e-Sour ce Cha rge Gate-Drain Charge
VDD=160V ID=10 A VGS=10V 17
7.5
5.5
24 nC
nC nC
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
t
r(Voff)
t
f
t
c
Of f - voltag e Rise Time Fall Time Cross-ov er T im e
VDD=160V ID=10A R
G
=4.7 Ω VGS=10V
(see test circuit, figure 5)
8 10 20
11 14 28
ns ns ns
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
I
SD
I
SDM
()
Source-drain Curre nt Source-drain Curre nt (pulsed)
7
28
A A
V
SD
() For ward On Vo lt age ISD=7A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
I
SD
= 10 A di/dt = 10 0 A/µs
V
DD
=50V Tj=150oC
(see test circuit, figure 5)
170 980
11.5
ns
nC
A
(∗) Pulsed: Pulseduration = 300 µs, duty cycle 1.5 % () Pulse width limited by safe operating area
Safe Operating Area ThermalImpedance
STD7NB20
3/8
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