SGS Thomson Microelectronics STD6NC40-1, STD6NC40 Datasheet
1/9March 2001
STD6NC40
N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK
PowerMesh™II MOSFET
(1)ISD ≤5A, di/dt ≤100A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
■ TYPICAL R
DS
(on) = 0.75Ω
■ EXTREMELY HIGH dv/d t C APABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
■ ADD SUFFIX “-1” FOR ORDERING IN IPAK
DESCRIPTION
The PowerMESH
™II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ SWITH MODE LOW POWER SUPPLIES
(SMPS)
■ CFL
ABSOLUTE MAXIMUM RATINGS
(•)Pu l se width limi te d by safe oper ating area
TYPE V
DSS
R
DS(on)
I
D
STD6NC40 400V < 1
Ω
5A
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0)
400 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
400 V
V
GS
Gate- source Voltage ±30 V
I
D
Drain Current (continuos) at TC = 25°C
5A
I
D
Drain Current (continuos) at TC = 100°C
3A
I
DM
(■)
Drain Current (pulsed) 20 A
P
TOT
Total Dissipation at TC = 25°C
55 W
Derating Factor 0.44 W/°C
dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
DPAK
1
3
3
2
1
IP AK
INTERNAL SCHEMATIC DIAGRAM
STD6NC40
2/9
THERMA L D ATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 1.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 275 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
6A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID = IAR, VDD = 50 V)
320 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0 400 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, TC = 125 °C
50 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±30V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = 250µA
234V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3 A
0.75 1
Ω
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max,
VGS=10V
6A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS > I
D(on)
x R
DS(on)max,
ID=3A
5.1 S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, VGS = 0
530 pF
C
oss
Output Capacitance 90 pF
C
rss
Reverse Transfer
Capacitance
15 pF
3/9
STD6NC40
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
DD
= 200V, ID = 3A,
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
11 ns
t
r
Rise Time 15 ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 320V, ID = 6A,
VGS = 10V
18
4
8.5
23
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 320V, ID = 6A,
R
G
=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
8
12
23
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 6 A
I
SDM
(1)
Source-drain Current (pulsed) 24 A
VSD (2)
Forward On Voltage
ISD = 6A, VGS = 0
1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 6A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
280
1.4
10
ns
µ
C
A
Thermal ImpedenceSafe Operating Area
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