SGS Thomson Microelectronics STD616A-1 Datasheet
HIGH VOLTAGE NPN POWER TRANSISTOR
■ REVERSEPINS OUT Vs STANDARDIPAK
(TO-251)PACKAGE
■ HIGH VOLTAGECAPABILITY
■ HIGH DCCURRENT GAIN
■ THROUGH-HOLE IPAK(TO-251) POWER
PACKAGEIN TUBE
■ MINIMUMLOT-TO-LOTSPREAD FOR
RELIABLEOPERATION
APPLICATIONS:
■ SWITCHMODE POWERSUPPLIES
DESCRIPTION
The STD616A-1 is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
STD616A-1
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collect or-E mitter Voltage (VBE=0) 1000 V
CES
Collect or-E mitter Voltage (IB= 0) 450 V
CEO
Emitter-Base Voltage (IC=0) 12 V
EBO
Collect or Current 1.6 A
I
C
Collect or Pe ak Current (tp<5ms) 2.4 A
CM
Base C urr ent 0.8 A
I
B
Base Peak Curre nt (tp<5ms) 1.2 A
BM
Tot al Di ss ipa t ion at Tc=25oC20W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junc t io n Tem pe r ature 150
T
j
o
C
o
C
April 1999
1/5
STD616A-1
THERMAL DATA
R
thj-case
Ther mal Resistance Junction- case Max 6.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CES
V
CEO(sus)
Collec t or Cut-off
Current (V
BE
=0V)
Collec t or -Emitter
V
= 1000 V
CE
= 1000 V Tj=125oC
V
CE
50
0.5
IC= 100 mA L = 25 mH 450 V
Sust aining Voltage
V
BEO
Collec t or -Base
IC=1mA 12 V
Sust aining Voltage
∗ Collec t or -Emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-Emi tter
BE(sat)
Saturation Voltage
h
∗ DC Current Ga in
FE
RESI STIVE LO AD
t
t
on
s
t
f
Turn O n Time
Storage Time
Fall Time
RESI STIVE LO AD
t
t
on
s
t
f
Turn O n Time
Storage Time
Fall Time
INDUCTI V E LOAD
t
s
t
f
Storage Time
Fall Time
INDUCTI V E LOAD
t
s
t
f
Turn O n Time
Storage Time
IC=250mA IB=65mA
=0.8A IB=250mA
I
C
IC=250mA IB=65mA
=0.8A IB=250mA
I
C
=200µAVCE=5V
I
C
=300mA VCE=5V
I
C
I
=480mA VCE=5V
C
=1.6A VCE=5V
I
C
17
25
12
4
VCC= 250 V IC=250mA
=65mA IB2=-130mA 0.2
I
B1
VCC= 250 V IC=0.8A
=160mA IB2=-0.4A 1
I
B1
Vcl=300V IC=250mA
=65mA IB2=-130mA
I
B1
L=200µH
Vcl=300V IC= 0.8 A
I
=160mA IB2=-0.4A
B1
L=200µH
0.3
0.5
1.0
1.2
5
0.65
2.5
0.35
5
0.5
2.5
0.25
Fall Time
∗
Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
µA
mA
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/5
Loading...