SGS Thomson Microelectronics STD60NF55L Datasheet
STD60NF55L
N-CHANNEL 55V - 0.012Ω - 60A DPAK
STripFET™ II POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STD60NF55L 55V < 0.015Ω 60A
■ TYPICAL R
■ LOW THRESHOLD DRIVE
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
DS(on)
= 0.012Ω
REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size
™” strip-based process. The re sulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility..
APPLICATIONS
■ AUTOMOTIVE
■ MOTOR CONTROL
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 16 V/ns
(2)
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
55 V
55 V
Gate- source Voltage ± 15 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
(l)
Drain Current (pulsed) 240 A
Total Dissipation at TC = 25°C
60 A
42 A
110 W
Derating Factor 0.73 W/°C
Single Pulse Avalanche Energy 400 mJ
Storage Temperature
Operating Junction Temperature
(1)ISD ≤40A, di/dt ≤350A/µs, VDD ≤ V
(2) Start i ng Tj=25°C, ID=30A, VDD=20V
– 55 to 175 °C
, Tj ≤ T
(BR)DSS
JMAX.
1/9April 2002
STD60NF55L
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 275 °C
Drain-source
ID = 250 µA, VGS = 0 55 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 15 V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10 V, ID = 30 A
VGS = 5 V, ID = 30 A
12V
0.012 0.015 Ω
0.014 0.017 Ω
1µA
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 10 V, ID= 30 A 35 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 390 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
1950 pF
130 pF
2/9
STD60NF55L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 180 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 60 A
(2)
Source-drain Current (pulsed) 240 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 25 V, ID = 30 A
DD
RG= 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)
= 40 V, ID = 60 A,
V
DD
VGS = 5 V
VDD = 25 V, ID = 30 A,
RG=4.7Ω, V
GS
= 4.5V
(see test circuit, Figure 3)
ISD = 60A, VGS = 0
= 40 A, di/dt = 100 A/µs,
I
SD
VDD = 25 V, Tj = 150 °C
(see test circuit, Figure 5)
30 ns
40
10
20
80
35
1.3 V
65
130
4
nC
nC
nC
ns
ns
ns
nC
A
Thermal ImpedanceSafe Operating Area
3/9
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