SGS Thomson Microelectronics STD60NF06 Datasheet
1/9October 2002
STD60NF06
N-CHANNEL 60V - 0.014Ω - 60A DPAK
STripFET™ II POWER MOSFET
(1) ISD≤ 60A, di/ dt ≤ 200 A/µs, VDD≤ 24V, Tj≤T
jMAX
■ TYPICAL R
DS
(on) = 0.014Ω
■ EXCEPTIONAL dv/dt CAPABILI TY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated D C-DC
converters for T el ecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
■ AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
(●) Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STD60NF06 60 V < 0.016 Ω 60A
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0)
60 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
60 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at TC = 25°C
60 A
I
D
Drain Current (continuous) at TC = 100°C
42 A
I
DM
(l)
Drain Current (pulsed) 240 A
P
TOT
Total Dissipation at TC = 25°C
110 W
Derating Factor 0.73 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
T
stg
Storage Temperature
– 55 to 175 °C
T
j
Operating Junction Temperature
DPAK
1
3
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
STD60NF06
2/9
THERMA L D ATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 275 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
30 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID = IAR, VDD = 30 V)
350 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0 60 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = 250 µA
24V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 30 A
0.014 0.016 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS =15 V , ID= 30 A 20 S
C
iss
Input Capacitance
V
DS
= 25 V, f = 1 MHz, VGS = 0
1810 pF
C
oss
Output Capacitance 360 pF
C
rss
Reverse Transfer
Capacitance
125 pF
3/9
STD60NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
DD
= 30 V, ID = 30 A
R
G
= 4.7Ω , VGS = 10 V
(see test circuit, Figure 3)
16 ns
t
r
Rise Time 108 ns
Q
g
Total Gate Charge VDD = 48 V, ID =60 A
VGS = 10 V
49 66 nC
Q
gs
Gate-Source Charge 18 nC
Q
gd
Gate-Drain Charge 14 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
VDD = 30 V, ID = 30 A,
RG=4.7Ω, V
GS
= 10 V
(see test circuit, Figure 3)
43
20
ns
ns
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =48 V, ID = 60 A
R
G
=4.7Ω, V
GS
= 10 V
(see test circuit, Figure 3)
40
12
21
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 60 A
I
SDM
(2)
Source-drain Current (pulsed) 240 A
VSD (1)
Forward On Voltage
ISD = 60 A, VGS = 0
1.3 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A, di/dt = 100A/µs,
V
DD
= 25V, Tj = 150°C
(see test circuit, Figure 5)
73
182
5
ns
nC
A
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