STD5NM60
N-CHANNEL 600V - 0.8Ω - 5A DPAK
MDmeshPower MOSFET
PRELIMINARY DATA
TYPE V
STD5NM60 600V <0.9Ω 5A
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
DS
DSS
(on) = 0.8Ω
R
DS(on)
I
D
CHARGE
■ LOW GATEINPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal
layout. The resulting producthas an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performancethat is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh family is very suitable for increase
the power density of high voltage converters allowing system miniaturization and higher efficiencies.
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns
T
stg
T
(•)Pulse width limitedby safe operating area
(1)ISD<5A, di/dt<200A/µs, VDD<V
May 2000
Drain-source Voltage (VGS= 0) 600 V
Drain-gate Voltage (RGS=20kΩ) 600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C5A
Drain Current (continuos) at TC= 100°C 3.1 A
(●) Drain Current (pulsed) 20 A
TotalDissipation at TC=25°C
Derating Factor 0.4 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
(BR)DSS,TJ<TJMAX
50 W
1/6
STD5NM60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
=25°C, ID=IAR,VDD=50V)
j
I
= 250 µA, VGS=0
D
= Max Rating
V
DS
=0)
DS
GS
=0)
V
= Max Rating, TC= 125 °C
DS
= ±30V
V
GS
600 V
5A
400 mJ
1 µA
10 µA
±100 nA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS=VGS,ID
= 10V, ID= 2.5A
V
GS
V
DS>ID(on)xRDS(on)max,
= 250µA
VGS=10V
345V
0.8 0.9 Ω
5A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
(1)
fs
C
iss
C
oss
C
rss
R
G
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward Transconductance
Input Capacitance
Output Capacitance 94 pF
Reverse Transfer
Capacitance
Gate Input Resistance
DS>ID(on)xRDS(on)max,
ID= 2.5A
V
= 25V, f = 1 MHz, VGS=0
DS
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
2.4 S
412 pF
10 pF
3 Ω
2/6
STD5NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Turn-on Delay Time
Rise Time
TotalGate Charge
Gate-Source Charge 3 nC
Gate-Drain Charge 11 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 29 ns
Cross-over Time 30 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 5 A
(2)
Source-drain Current (pulsed) 20 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 1.8 µC
Reverse Recovery Current 12 A
V
= 300V, ID= 2.5A
DD
= 4.7Ω VGS= 10V
R
G
(see test circuit, Figure 3)
V
= 400V, ID= 5A,
DD
= 10V
V
GS
V
= 480V, ID= 5A,
DD
=4.7Ω, VGS= 10V
R
G
(see test circuit, Figure 5)
ISD= 5A, VGS=0
I
= 5A, di/dt = 100A/µs, V
SD
= 100V, Tj= 150°C
(see test circuit, Figure 5)
DD
16 ns
9ns
13 nC
20 ns
1.5 V
300 ns
3/6
STD5NM60
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test CircuitFor
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
4/6
TO-252 (DPAK) MECHANICAL DATA
STD5NM60
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
H
A
E
C2
L2
B2
==
==
DETAIL ”A”
D
2
13
L4
A1
C
A2
DETAIL ”A”
B
G
==
0068772-B
5/6
STD5NM60
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
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subject to change without notice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
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