SGS Thomson Microelectronics STD5NE10L Datasheet
STD5NE10L
N - CHANNEL 100V - 0.3
TYPE V
ST D5 NE10L 100 V < 0.4 Ω 5A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHERUGGEDTECHNOLOGY
■ 100 % AVALANCHE TESTED
■ APPLICATIONORIENTED
DS(on)
DSS
= 0.3 Ω
CHARACTERIZATION
■ FORTAPE & REELAND OTHER
PACKAGINGOPTIONSCONTACT SALES
OFFICES
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ” Single Feature
Size” strip-based process. The resulting transistor shows extremely high packing density for
low on-resistance, rugged avalanche characteristicsand less criticalalignment steps therefore
a remarkablemanufacturingreproducibility.
R
DS(on)
I
D
Ω
- 5A - DPAK/IPAK
STripFET POWER MOSFET
PRELIMINARY DATA
3
2
1
IPAK
TO-251
(Suffix ”-1”)
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
3
1
APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES,etc.)
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Val u e Uni t
V
V
V
I
DM
P
dv/ dt (
T
(•) Pulse width limited by safe operating area (1)ISD≤ 5 A, di/dt ≤ 200 A/µs, VDD≤ V
October 1998
Drain-source Voltage (VGS=0) 100 V
DS
Drain- ga t e Volt age (RGS=20kΩ)
DGR
Gat e- source Vol tage ± 20 V
GS
I
Drain Current (continuous) at Tc=25oC5A
D
I
Drain Current (continuous) at Tc=100oC3.5A
D
(•) Dr ain Current (puls ed ) 20 A
Total Dissipation at Tc=25oC25W
tot
Derat i ng Fact or 0.2 W/
1) Peak Diode Recovery vol tage slope 6 V /ns
Sto rage Temper at u re -65 to 1 50
stg
T
Max. Ope r ating Junction Tempera t ur e 150
j
100 V
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/5
STD5NE10L
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
E
Ther mal Resistanc e Juncti on-case Max
Ther mal Resistanc e Juncti on-ambien t Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature F or S oldering Pu rpose
l
Avalanche Curr ent, Repetit ive or Not-Repetit ive
(pulse width limited by T
Single Pu lse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=30V)
j
max)
j
5
100
1.5
275
5A
20 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
100 V
Break d own Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- b ody Le akage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=100oC
V
DS
= ± 20 V
V
GS
1
10
± 100 nA
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250 µA
11.72.5V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On
Resistance
VGS=10V ID=2.5A
=5V ID=2.5A
V
GS
On State D ra in Cur rent VDS>I
D(on)xRDS(on )max
0.3
0.35
5A
0.4
0.45
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capacitan c e
iss
Out put Capacitanc e
oss
Reverse Transf er
rss
Capacitance
VDS>I
D(on)xRDS(on )maxID
=2.5 A 2 S
VDS=25V f=1MHz VGS=0 345
45
20
450
60
25
µA
µ
Ω
Ω
pF
pF
pF
A
2/5
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