SGS Thomson Microelectronics STD5N20 Datasheet
STD5N20
N - CHANNEL 200V - 0.7Ω - 5A - TO-251/TO-252
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
ST D5N2 0 200 V < 0. 8 Ω 5A
■ TYPICALR
■ AVALANCHERUGGED TECHNOLOGY
■ 100%AVALANCHETESTED
■ REPETITIVEAVALANCHE DATA AT100
■ LOW GATE CHARGE
■ HIGHCURRENT CAPABILITY
o
■ 150
■ APPLICATIONORIENTED
C OPERATINGTEMPERATURE
DS(on)
= 0.7 Ω
o
C
CHARACTERIZATION
■ THROUGH-HOLEIPAK (TO-251) POWER
PACKAGEIN TUBE(SUFFIX”-1”)
■ SURFACE-MOUNTING DPAK (TO-252)
POWERPACKAGEIN TAPE& REEL
(SUFFIX”T4”)
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAY DRIVERS
■ DC-DCCONVERTERS & DC-AC INVERTERS
■ TELECOMMUNICATIONPOWERSUPPLIES
INDUSTRIALMOTORDRIVES
3
2
IPAK
TO-251
(Suffix”-1”)
1
(Suffix ”T4”)
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area
March 1999
Drain-source Voltage (VGS= 0) 200 V
DS
Drain- gate Voltag e ( RGS=20kΩ) 200 V
DGR
Gate-s ource Voltage
GS
I
Drain Curr ent (continu ous) at Tc=25oC5A
D
I
Drain Curr ent (continu ous) at Tc=100oC 3.5 A
D
20 V
±
(•) Drain Curr ent (pulsed) 20 A
Tot al Dissipat ion at Tc=25oC45W
tot
Derat ing Factor 0.36 W/
Sto rage Tem perature -65 to 150
stg
T
Max. Operat ing Junc tion Tem per ature 150
j
o
o
o
C
C
C
1/10
STD5N20
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Tem pera tu r e For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse A v alan che Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max,)
j
2.77
100
1.5
275
5A
130 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 200 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 20 V
GS
10
100
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain-sour c e On
VGS=10V ID= 2.5 A 0.7 0.8
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)ma x
5A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci tanc e
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)ma xID
=2.5A 1.5 3 S
VDS=25V f=1MHz VGS= 0 450
75
15
600
100
20
µ
µA
Ω
pF
pF
pF
A
2/10
STD5N20
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise T ime
VDD=100V ID=2.5A
R
=4.7
G
Ω
VGS=10V
7
6
10
8
(see test circuit, figure 3)
(di/dt)
Tur n-on Current Slope VDD=160V ID=5A
on
R
G
=47
Ω
VGS=10V
400 A/µs
(see test circuit, figure 5)
Q
Q
Q
Tot al Gate Char ge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 160 V ID=5A VGS=10V 18
6
7
25 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off-voltage Ris e Time
Fall T ime
f
Cross-over Tim e
c
VDD=160V ID=5A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
15
7
5
10
7
20
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
5
20
(pulsed)
(∗)ForwardOnVoltage ISD=5A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 5 A di/dt = 100 A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
180
1125
Charge
Reverse Recovery
12.5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/10
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