SGS Thomson Microelectronics STD4NC50 Datasheet
STD4NC50
N - CHANNEL 500V - 1.3 Ω - 3.7 A TO-251
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST D4N C50 500 V < 1.5 Ω 3.7 A
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ NEWHIGH VOLTAGE BENCHMARK
■ GATECHARGE MINIMIZED
DS(on)
= 1.3 Ω
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*areafigure of merit while keeping the device
at the leading edge for what concerns switching
speed,gate chargeand ruggedness.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SWITHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVER
3
2
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤3.7 A, di/dt ≤ 100 A/µs, VDD≤ V
September 1999
Dra in- sour c e Volt age (VGS= 0) 500 V
DS
Dra in- gat e V ol t age (RGS=20kΩ) 500 V
DGR
Gat e-source Voltage ± 30 V
GS
Dra in Cu rr ent (contin uous ) a t Tc=25oC3.7A
I
D
Dra in Cu rr ent (contin uous ) a t Tc=100oC2.3A
I
D
(•) Dra in Cu rr ent (pulsed) 14.8 A
Tot al Dis sipation at Tc=25oC50W
tot
Der ati ng Fact or 0.4 W/
1) Peak Di ode Re covery voltage sl ope 3 V/ ns
St orage T em pe r at ure -65 to 150
stg
Max. Operating Junc t ion Tem peratur e 150
T
j
,Tj≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
STD4NC50
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Tempera t ure For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se A v alan c he E nergy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
2.5
100
1.5
275
3.7 A
220 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 500 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 30 V
GS
1
50
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain-s our c e On
VGS=10V ID=1.9A 1.3 1.5
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)ma x
3.7 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacit anc e
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)ma xID
=1.9A 3 S
VDS=25V f=1MHz VGS= 0 700
85
9
µ
µA
Ω
pF
pF
pF
A
2/8
STD4NC50
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Time
t
r
Rise T ime
VDD=250V ID= 1.9 A
=4.7 Ω VGS=10V
R
G
11.5
9
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Char ge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 400 V ID=3.7A VGS=10V 18
6
8
25 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Ris e Time
Fall T ime
f
Cross-over Time
c
VDD=400V ID= 3.7 A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
7
6
13
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
3.7
14.8
(pulsed)
(∗)ForwardOnVoltage ISD=3.7A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 3.7 A di/dt = 100 A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
380
2.3
Charge
Reverse Recovery
12
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
SafeOperating Area ThermalImpedance
3/8
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