SGS Thomson Microelectronics STD4NB40-1 Datasheet
STD4NB40
STD4NB40-1
N-CH A NNEL 400V - 1.47Ω - 4A DPAK/IPAK
PowerMESH™ MOSFET
TYPE V
STD4NB40 400 V < 1.8 Ω 4 A
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
DS
DSS
(on) = 1.47 Ω
R
DS(on)
I
D
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termination structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES ( SMPS)
■ DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
IPAK
TO-251
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
T
stg
T
j
(•)Pu l se width limited by safe operati ng area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 16 A
Total Dissipation at TC = 25°C
Derating Factor 0.47 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD≤ 4A, di/dt≤200 A/µs, VDD≤ V
400 V
400 V
4A
2.52 A
60 W
, Tj≤ T
(BR)DSS
jMAX
1/10June 2001
STD4NB40/STD4NB40-1
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 2.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 275 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 400 V
4A
230 mJ
Breakdown Voltage
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 30V ±100 nA
GS
1µA
10 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 2.3 A
234V
1.47 1.8 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 72 pF
Reverse Transfer
Capacitance
I
D
V
DS
= 2.3 A
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
2.4 S
405 pF
9pF
2/10
STD4NB40/STD4NB40-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 8 ns
Total Gate Charge
Gate-Source Charge 7 nC
Gate-Drain Charge 5.1 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-Voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 4 A
(2)
Source-drain Current (pulsed) 16 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 1.6 µC
Reverse Recovery Current 10.5 A
= 200 V, ID = 2.5 A
DD
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
V
= 320V, ID = 5 A,
DD
VGS = 10V
= 320V, ID = 5 A,
V
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
ISD = 4 A, VGS = 0
I
= 5 A, di/dt = 100A/µs
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
11 ns
14.5 20 nC
9
6
14
1.6 V
300 ns
ns
ns
ns
Thermal Imp e danceSafe Operating Area
3/10
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