SGS Thomson Microelectronics STD4NB25 Datasheet
®
STD4NB25
N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAK
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STD4NB25 250 V < 1.1 Ω 4 A
ν TYPICAL R
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν VERY LOW INTRINS IC CAPA CITA NCE S
ν GATE CHARGE MINIMIZED
ν FOR TROUGH-HOLE VERSION CONTACT
DS(on)
= 0.95 Ω
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
ν SWITCH M ODE PO W E R SUP PLIE S (S MP S )
ν DC-AC CONVERTERS FOR WELDING
EQUIPME NT AND UNINTERRUP TIBLE
POWE R SUP PLI ES AND MOTO R DRIV E
3
2
1
IPAK
TO-251
(Suffix "-1" )
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
3
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1) ISD ≤4 Α, di/dt â 20 0 A/µs, VDD ≤ V
February 2000
Drain-source Voltage (VGS = 0) 250 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC4A
D
I
Drain Current (continuous) at Tc = 100 oC2.5A
D
250 V
(•) Drain Current (pulsed) 16 A
Total Dissipation at Tc = 25 oC40W
tot
Derating Factor 0.32 W/oC
1) Peak Diode Recovery voltage slope 5.5 V/ns
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
1/6
STD4NB25
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 50 V)
3.12
100
1.5
275
4A
75 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DS S
Drain-source
I
= 250 µA V
D
GS
= 0
250 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID =2 A 0.9 5 1.1 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
4A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =2 A 0.7 1.6 S
= 0 260
GS
70
350
100
9
13
µA
µA
pF
pF
pF
2/6
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