SGS Thomson Microelectronics STD45NF03L Datasheet
N - CHANNEL 30V - 0.011 Ω - 45A DPAK
TYPE V
DSS
ST D45N F 03L 30 V < 0.013 Ω 45 A
■ TYPICALR
■ LOW THRESHOLDDRIVE
■ ADDSUFFIX ”T4” FORORDERING IN TAPE
DS(on)
= 0.011 Ω
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
R
DS(o n)
I
D
STD45NF03L
STripFET POWER MOSFET
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
E
AS(1
T
(•) Pulse width limited by safe operating area (1) starting Tj
September 1999
Dra in- sour c e Vol ta ge (VGS=0) 30 V
DS
Drain- gate Voltage (RGS=20kΩ)30V
DGR
Gate-s ource Voltage ± 20 V
GS
Dra in Current ( cont inuous) at Tc=25oC45A
I
D
Dra in Current ( cont inuous) at Tc= 100oC 31.5 A
I
D
(•) D ra in Current ( pulsed) 180 A
Tot al Dissi pat io n a t Tc=25oC55W
tot
Der ati ng Fact or 0.37 W/
) Single Pu lse A v alan c he Energy 200 mJ
St orage Tem pe ra t ure -65 to 175
stg
Max. Operat ing Junct ion Te m pe ra t ure 175
T
j
=25oC, ID= 22.5A, VDD= 20V
o
C
o
C
o
C
1/6
STD45NF03L
THERMAL DATA
R
thj-pcb
R
thj-amb
R
thj-sink
T
Ther mal Resistanc e Junct ion-PC Boa rd Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temper a tu r e For Soldering Pu rpos e
l
2.7
62.5
0.5
275
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Volta ge
Drain Current (V
GS
Gat e- bod y L eak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A11.52.5V
Sta t ic Drain -s ource O n
Resistance
VGS=10V ID= 22.5 A
=4.5V ID= 22.5 A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
0.011
0.013
30 A
0.013
0.018ΩΩ
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input C apaci t anc e
iss
Out put Capacitance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=22.5
60 S
A
VDS=25V f=1MHz VGS= 0 V 2550
630
215
µ
µA
pF
pF
pF
A
2/6
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