SGS Thomson Microelectronics STD40NF03L Datasheet

STD40NF03L
N-CHANNEL 30V - 0.012
LOW GATE CHARGE STripFETPOWER MOSFET
TYPE V
ST D40N F 03L 30 V < 0.014 40 A
TYPICALR
TYPICALQ
OPTIMAL R
CONDUCTIONLOSSESREDUCED
SWITCHINGLOSSESREDUCED
DS(on) g
DSS
= 35 nC @ 10V
DS(on)xQg
DESCRIPTION
This applicationspecific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size” strip-based process. The resul­ting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performancein termsof both conductionand switching losses. This is extremely important for motherboardswhere fast switching and high effi­ciencyare of paramount importance.
R
DS(on)
TRADE-OFF
I
D
- 40A DPAK
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SPECIFICALLYDESIGNED AND
OPTIMISEDFOR HIGH EFFICIENCYCPU CORE DC/DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
D
I
DM
P
T
() Current Limited By The Package (••) Pulse width limited by safe operating area
Dra in- sour c e Volt age (VGS=0) 30 V
DS
Dra in- gate V ol t age ( RGS=20kΩ)30V
DGR
Gat e-source Voltage
GS
(•) Dra in C u rr ent (c ontinuous) a t Tc=25oC20A
I
Dra in C u rr ent (c ontinuous) a t Tc=100oC20A
D
(••) Dra in C u rr ent (puls ed ) 80 A
Tot al Dissipation at Tc=25oC55W
tot
Der ati ng Fac t or 0.37 W/ St orage Temperature -65 t o 175
stg
T
Max. O perating Junction T emper at ure 175
j
20 V
±
o
C
o
C
o
C
14/01/2000
1/6
STD40NF03L
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambient Max Maximum Lead Te m pe ra tur e For So lder ing Purpose
l
2.73
62.5 300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n V o lt age
I
DSS
I
GSS
Zero Gate Voltage Drain Cur re nt ( V
GS
Gat e- bod y L eakage Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA12.5V Sta t ic Drain -s ource On
Resistance On State Drain Current VDS>I
VGS=10V ID=20A V
=5V ID=20A
GS
D(on)xRDS(on)ma x
0.012
0.019
0.014
0.022
40 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitanc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)ma xID
=20 A 40 S
VDS=25V f=1MHz VGS= 0 1470
490 110
µA µ
Ω Ω
pF pF pF
A
2/6
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