SGS Thomson Microelectronics STD40NF03L Datasheet
STD40NF03L
N-CHANNEL 30V - 0.012
LOW GATE CHARGE STripFET POWER MOSFET
TYPE V
ST D40N F 03L 30 V < 0.014 Ω 40 A
■ TYPICALR
■ TYPICALQ
■ OPTIMAL R
■ CONDUCTIONLOSSESREDUCED
■ SWITCHINGLOSSESREDUCED
DS(on)
g
DSS
= 0.012 Ω
= 35 nC @ 10V
DS(on)xQg
DESCRIPTION
This applicationspecific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboardswhere fast switching and high efficiencyare of paramount importance.
R
DS(on)
TRADE-OFF
I
D
Ω
- 40A DPAK
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ SPECIFICALLYDESIGNED AND
OPTIMISEDFOR HIGH EFFICIENCYCPU
CORE DC/DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
D
I
DM
P
T
(•) Current Limited By The Package
(••) Pulse width limited by safe operating area
Dra in- sour c e Volt age (VGS=0) 30 V
DS
Dra in- gate V ol t age ( RGS=20kΩ)30V
DGR
Gat e-source Voltage
GS
(•) Dra in C u rr ent (c ontinuous) a t Tc=25oC20A
I
Dra in C u rr ent (c ontinuous) a t Tc=100oC20A
D
(••) Dra in C u rr ent (puls ed ) 80 A
Tot al Dissipation at Tc=25oC55W
tot
Der ati ng Fac t or 0.37 W/
St orage Temperature -65 t o 175
stg
T
Max. O perating Junction T emper at ure 175
j
20 V
±
o
C
o
C
o
C
14/01/2000
1/6
STD40NF03L
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Te m pe ra tur e For So lder ing Purpose
l
2.73
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n V o lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur re nt ( V
GS
Gat e- bod y L eakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA12.5V
Sta t ic Drain -s ource On
Resistance
On State Drain Current VDS>I
VGS=10V ID=20A
V
=5V ID=20A
GS
D(on)xRDS(on)ma x
0.012
0.019
0.014
0.022
40 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitanc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)ma xID
=20 A 40 S
VDS=25V f=1MHz VGS= 0 1470
490
110
µA
µ
Ω
Ω
pF
pF
pF
A
2/6
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