SGS Thomson Microelectronics STD40NE03L Datasheet
STD40NE03L
N - CHANNEL 30V - 0.012 Ω - 40A TO-252
STripFET POWER MOSFET
■ TYPICALR
DS(on)
= 0.012 Ω
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE
■ APPLICATIONORIENTED
CHARACTERIZATION
■ ADDSUFFIX ”T4” FORORDERING INTAPE
& REEL
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ DC-DC& DC-ACCONVERTERS
INTERNAL SCHEMATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
DS
Dra in- sour c e Volta ge (VGS=0) 30 V
V
DGR
Drain- gate Voltage (RGS=20kΩ)30V
V
GS
Gate-s ource Volt age ± 20 V
I
D
Dra in Cu rr ent (continuous) at Tc=25oC20**A
I
D
Dra in Cu rr ent (continuous) at Tc= 100oC20**A
I
DM
(•) D ra in Cu rr ent (pulsed) 160 A
P
tot
Tot al Dissi pat io n at Tc=25oC55W
Der ati ng Fa c t or 0.37 W/
o
C
dv/dt (
1) P eak Diode Rec o ve ry volt a ge slope 7 V/ ns
T
stg
St orage Tem pe ra t ure -65 to 175
o
C
T
j
Max. Operating Junction Tem pe ra t ure 175
o
C
(•) Pulse width limitedby safe operatingarea (1)ISD≤20A, di/dt ≤ 300 A/µs, VDD≤ V
(BR)DSS
,Tj≤T
JMAX
(**) Valuelimitedonly by the package
TYPE V
DSS
R
DS(o n)
I
D
ST D40N E 03L 30 V < 0.016 Ω 40 A
1
3
DPAK
TO-252
(Suffix ”T4”)
1/8
THERMAL DATA
R
thj-pcb
R
thj-amb
R
thj-sink
T
l
Ther mal Resistanc e Junct ion-PC Boa rd Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperatur e For Soldering Pu rpose
2.7
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
Avalanche Current, Repe titive or Not-Repetitive
(pulse width limited by T
j
max)
40 A
E
AS
Single Pul se Avalanche Ener gy
(starting T
j
=25oC, ID=IAR,VDD=15V)
100 mJ
ELECTRICAL CHARACTERISTICS
(T
case
=25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. U nit
V
(BR)DSS
Drain-source
Break dow n Vo lt age
ID=250µAVGS=0 30 V
I
DSS
Zero Gate Voltage
Drain Curre nt (V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc= 125oC
1
10
µ
A
µA
I
GSS
Gat e- bod y Leakag e
Current (V
DS
=0)
V
GS
=± 20 V
±
100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. U nit
V
GS(th)
Gate Threshold Volt age VDS=VGSID= 250 µ A11.72.5V
R
DS(on)
Sta t ic Drain-s our c e On
Resistance
VGS=10V ID=20A
V
GS
=5V ID=20A
0.012 0.016
0.022ΩΩ
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
VGS=10V
40 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. U nit
g
fs
(∗)Forward
Tr ansc on duc tance
VDS>I
D(on)xRDS(on )maxID
= 2 0 A 15 28 S
C
iss
C
oss
C
rss
Input Capaci t ance
Out put Capac itance
Reverse Transfer
Capacit a nc e
VDS=25V f=1MHz VGS= 0 V 2200
570
200
pF
pF
pF
STD40NE03L
2/8
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. U nit
t
d(on)
t
r
Tur n-on Delay Time
Rise Time
VDD=15V ID=30A
R
G
=4.7
Ω
VGS=5V
(Resis t iv e Load, see fig. 3)
38
260
ns
ns
Q
g
Q
gs
Q
gd
Tot al Gate Charge
Gat e- Source Char g e
Gate-Drain Charge
VDD=24V ID=64A VGS=5V 35
18
13
45 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. U nit
t
d(off)
t
f
Tur n-of f Dela y Tim e
Fall T ime
VDD=15V ID=30A
R
G
=4.7 Ω VGS=5V
(Resis t iv e Load, see fig. 3)
75
50
ns
ns
t
r(Voff)
t
f
t
c
Off-volt age Rise Time
Fall T ime
Cross-over Tim e
VDD=24V ID=64A
R
G
=4.7 Ω VGS=5V
(Indu ct iv e Load, see fig . 5)
35
120
175
ns
ns
ns
SOURCEDRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. U nit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
40
160
A
A
V
SD
(∗)ForwardOnVoltage ISD=40A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 64 A di/dt = 100 A/µs
V
DD
=15V Tj=150oC
(see test circuit, fig. 5)
55
0.1
3.5
ns
µC
A
(∗) Pulsed: Pulse duration= 300µs, dutycycle 1.5 %
(•) Pulse width limited by safeoperating area
SafeOperating Area ThermalImpedance
STD40NE03L
3/8
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