SGS Thomson Microelectronics STP3NK60ZFP, STP3NK60Z, STD3NK60Z-1, STD3NK60Z, STB3NK60Z Datasheet
1/15July 2003
STP3NK60Z - STP3NK60ZFP
STB3NK60Z-STD3NK60Z-STD3NK60Z-1
N-CHANNEL600V-3.3Ω -2.4A TO-220/FP/D2PAK/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET
■ TYPICAL R
DS
(on) = 3.3 Ω
■ EXTREMELY HIGH d v/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GAT E CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VER Y GOOD MANUFA CTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerME SH™ layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LI GHTING
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
Pw
STP3NK60Z
STP3NK60ZFP
STB3NK60Z
STD3NK60Z
STD3NK60Z-1
600 V
600 V
600 V
600 V
600 V
< 3.6 Ω
< 3.6 Ω
< 3.6 Ω
< 3.6 Ω
< 3.6 Ω
2.4 A
2.4 A
2.4 A
2.4 A
2.4 A
45 W
20 W
45 W
45 W
45 W
SALES TYPE MARKING PACKAGE PACKAGING
STP3NK60Z P3NK60Z TO-220 TUBE
STP3NK60ZFP P3NK60ZFP TO-220FP TUBE
STB3NK60ZT4 B3NK60Z
D
2
PAK
TAPE & REEL
STD3NK60Z-1 D3NK60Z IPAK TUBE
STD3NK60ZT4 D3NK60Z DPAK TAPE & REEL
TO-220 TO-220FP
1
2
3
1
3
DPAK
3
2
1
IPAK
1
3
D2PAK
INTERNAL SCHEMATIC DIAGRAM
STP3NK60Z /FP - STB3NK60Z - ST D3NK60Z - STD3NK60Z-1
2/15
ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area
(1) I
SD
≤2.4 A, di/dt ≤200A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back -to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage trans ients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an effi cient and
cost-effective interve nti on to protect the device’s integrity. Thes e integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
STP3NK60Z
STB3NK60Z
STP3NK60ZFP
STD3NK60Z
STD3NK60Z-1
V
DS
Drain-source Voltage (VGS=0)
600 V
V
DGR
Drain-gate Voltage (RGS=20kΩ)
600 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at TC= 25°C
2.4 2.4 (*) 2.4 (*) A
I
D
Drain Current (continuous) at TC= 100°C
1.51 1.51 (*) 1.51 (*) A
I
DM
()
Drain Current (pulsed) 9.6 9.6 (*) 9.6 (*) A
P
TOT
Total Dissipation at TC= 25°C
45 20 45 W
Derating Factor 0.36 0.16 0.36 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2100 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
Insulation Withstand Voltage (DC) - 2500 - V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55to150 °C
TO-220
D
2
PAK
TO-220FP
DPAK
IPAK
Rthj-case Thermal Resistance Junction-case Max 2.78 6.25 2.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
2.4 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID=IAR,VDD=50V)
150 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
3/15
STP3NK60Z /FP - STB3NK60Z - ST D 3NK60Z - STD3NK60Z-1
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SP ECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when VDSincreases from 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID=1mA,VGS= 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
VDS= Max Rating, TC= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 20 V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID
=50µA
3 3.75 4.5 V
R
DS(on)
Static Drain-source On
Resistance
VGS=10V,ID= 1.2 A 3.3 3.6 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS=20V,ID= 1.2 A 1.8 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V,f=1MHz,VGS= 0 311
43
8
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
VGS=0,VDS= 0 to 400 V 26 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VDD=300V,ID= 1.5 A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
9
14
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=400V,ID= 2.4 A,
V
GS
=10V
11.8
2.6
6.4
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
VDD= 480 V, ID=3A
R
G
=4.7ΩVGS=10V
(Resistive Load see, Figure 3)
19
14
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V, ID=3A,
RG=4.7Ω, VGS=10V
(Inductive Load see, Figure 5)
11
14
24
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
2.4
9.6
A
A
VSD(1)
Forward On Voltage
ISD= 2.4 A, VGS=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 3 A, di/dt = 100A/µs
VDD=35V,Tj= 150°C
(see test circuit, Figure 5)
306
948
6.2
ns
nC
A
STP3NK60Z /FP - STB3NK60Z - ST D3NK60Z - STD3NK60Z-1
4/15
Output Characteristics
Safe Operating Area
Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP
Thermal I mpedance
Transfer Characteristics
5/15
STP3NK60Z /FP - STB3NK60Z - ST D 3NK60Z - STD3NK60Z-1
Transconductance
Normalized Gate Threshold Voltage vs Temp.
Static Drain-source On ResistanceTransconductance
Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
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