SGS Thomson Microelectronics STD3NC60-1 Datasheet
STD3NC60
STD3NC60-1
N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK
PowerMesh™II MOSFET
TYPE V
STD3NC60
STD3NC60-1
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
DS
DSS
600V
600V
(on) = 1.8Ω
R
DS(on)
<2.2Ω
<2.2Ω
I
D
3.2A
3.2A
REEL (SMD PACKAGE)
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. T he layout re-
finements introduced greatly improv e the Ron*area
figure of m erit while keeping the device at the leading edge for what con cerns swithing s peed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
3
1
DPAK IPAK
No Suffix
(Suffix”-1”)
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns
T
stg
T
(•)Pulse width limited by safe operating area
≤3.2A, di/dt ≤300A/µs, VDD≤ V
(1)I
SD
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C
()
Drain Current (pulsed) 12.8 A
Total Dissipation at TC= 25°C
3.2 A
2A
50 W
Derating Factor 0.4 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
(BR)DSS,Tj≤TJMAX.
1/10August 2002
STD3NC60 - STD3NC60-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 275 °C
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID=IAR,VDD=50V)
j
ID= 250 µA, VGS= 0 600 V
3.2 A
270 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±30V ±100 nA
GS
1µA
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 1.5 A
= 250µA
234V
1.8 2.2 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 72 pF
Reverse Transfer
Capacitance
D(on)xRDS(on)max,
ID=2A
V
=25V,f=1MHz,VGS=0
DS
3.7 S
475 pF
10 pF
2/10
STD3NC60 - STD3N C60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
gs
gd
Turn-on Delay Time
Rise Time 14 ns
Total Gate Charge
g
Gate-Source Charge 2.5 nC
Gate-Drain Charge 9 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 19 ns
Cross-over Time 24 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 3.2 A
(2)
Source-drain Current (pulsed) 12.8 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 2.7 µC
Reverse Recovery Current 9 A
= 300V, ID=2A
DD
R
= 4.7Ω VGS=10V
G
(see test circuit, Figure 3)
V
= 480V, ID=4A,
DD
=10V
V
GS
V
=480V,ID=4A,
DD
RG= 4.7Ω, VGS=10V
(see test circuit, Figure 5)
ISD= 3.2A, VGS=0
I
= 4A, di/dt = 100A/µs,
SD
= 100V, Tj= 150°C
V
DD
(see test circuit, Figure 5)
14 ns
16.5 23.1 nC
15 ns
1.6 V
600 ns
Safe Operating Area
Thermal Impedance
3/10
Loading...