SGS Thomson Microelectronics STD3NB50 Datasheet
STD3NB50
N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STD3NB50 500 V < 2.8 Ω 3 A
■ TYPICAL R
■ EXTREM E LY HIG H dv/ dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DS(on)
= 2.5 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching char acteristics.
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVE RTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
INTER NAL SCH E M ATI C DIAG RA M
3
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1) ISD ≤3A, di/dt ≤ 200 A/µs, VDD ≤ V
May 1998
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Drain-source Voltage (VGS = 0) 500 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC3A
D
I
Drain Current (continuous) at Tc = 100 oC 1.9 A
D
500 V
(•) Drain Current (pulsed) 12 A
Total Dissipation at Tc = 25 oC50W
tot
Derating Factor 0.4 W/oC
1) Peak Diode Recovery voltage slope 4.5 V/ns
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
(BR)DSS
, Tj ≤ T
JMAX
o
C
o
C
1/6
STD3NB50
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x)
j
DD
= 50 V)
2.5
100
1.5
275
3A
40 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
500 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID =1.9 A 2.5 2.8 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
3.8 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 1.9 A 2 2.3 S
= 0 400
GS
62
7.5
520
84
10
µA
µA
pF
pF
pF
2/6
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