SGS Thomson Microelectronics STD3N30L-1 Datasheet
STD3N30L
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 1.15 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ APPLICATION ORIENTED
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTINGDPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIALACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STD 3N30L 300 V < 1.4 Ω 3A
November 1996
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
DS
Drain - s ource Voltage (VGS= 0) 300 V
V
DGR
Drain- gate Voltage (RGS=20kΩ) 300 V
V
GS
Gate-source Voltage ± 15 V
I
D
Drain Current (continuous) at Tc=25oC3A
I
D
Drain Current (continuous) at Tc=100oC2A
I
DM
(•) Drain Current (pulsed) 12 A
P
tot
Total Di ssipation at Tc=25oC50W
Derat ing Factor 0.4 W/
o
C
T
stg
St or a ge Tem perature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulsewidth limited bysafe operating area
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e
2.5
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
3A
E
AS
Single Pul se Avalanche Ener gy
(starti ng Tj=25oC, ID=IAR,VDD=50V)
20 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
5mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
2A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS= 0 300 V
I
DSS
Zer o Gate Volt age
Drain Current (V
GS
=0)
V
DS
=MaxRating
V
DS
= Max Rating x 0 .8 Tc=125oC
10
100
µA
µA
I
GSS
Gat e- body Leak age
Current (VDS=0)
VGS= ± 15 V ± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
R
DS(on)
St at ic Drain-s our ce O n
Resistance
VGS=5V ID= 1.5 A 1.15 1.4 Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
3A
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=1.5A 1.5 3.5 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS=0 580
75
15
800
120
25
pF
pF
pF
STD3N30L
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on T im e
Rise Time
VDD=150V ID=1.5A
RG=50 Ω VGS=5V
(see test circuit, figure 3)
70
150
100
210
ns
ns
(di/dt)
on
Turn-on C urrent S lope VDD=240V ID=3A
RG=50 Ω VGS=5V
(see test circuit, figure 5)
115 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD= 240 V ID=3A VGS=5V 16
5
7
22 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off -voltage R ise Time
Fall Time
Cross-over Time
VDD=240V ID=3A
RG=50 Ω VGS=5V
(see test circuit, figure 5)
50
40
100
70
60
140
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
3
12
A
A
V
SD
(∗) Forward On Volt age ISD=3A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=3A di/dt=100A/µs
VDD= 200 V Tj=150oC
(see test circuit, figure 5)
300
1.5
10
ns
µC
A
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
STD3N30L
3/10
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