SGS Thomson Microelectronics STD3N25 Datasheet
STD3N25
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STD3N25 250 V < 2 Ω 3A
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ APPLICATION ORIENTED
DS(on)
=1Ω
o
C
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTINGDPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIALACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
3
2
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
1
DPAK
TO-252
(Suffix ”T4”)
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
V
V
I
DM
P
T
(•) Pulsewidth limited bysafe operating area
January 1995
Drain - s ource Voltage (VGS= 0) 250 V
DS
Drain- gate Voltage (RGS=20kΩ) 250 V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC3A
I
D
Drain Current (continuous) at Tc=100oC1.9A
I
D
(•) Drain Current (pulsed) 12 A
Total D i ssipation at Tc=25oC45W
tot
Derat ing Factor 0.36 W/
St or a ge Tem perature -65 to 150
stg
Max. Operating Junctio n Temperatur e 150
T
j
o
o
o
C
C
C
1/10
STD3N25
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
E
E
I
AR
Thermal Res istance Junction -c as e Max
Thermal Resis tance Junction- ambient Max
Thermal Res istance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=50V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(Tc= 100oC, puls e width limited by Tjmax, δ <1%)
2.78
100
1.5
275
3A
20 mJ
5mJ
1.9 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 250 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Voltage
Drain Current (V
GS
Gat e- body Leakage
=0)
=MaxRating
V
DS
V
= Max R ating x 0.8 Tc=125oC
DS
250
1000µAµA
VGS= ± 20 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold V oltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
Resistance
On St ate Dra in Current VDS>I
VGS=10V ID=1.5A
VGS=10V ID=1.5A Tc= 100oC
D(on)xRDS(on)max
12
4
3A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=1.5A 1 1.8 S
VDS=25V f=1MHz VGS=0 370
60
10
500
100
20
Ω
Ω
pF
pF
pF
2/10
STD3N25
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Turn-on C urrent Slope VDD=200V ID=3A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=125V ID=1.5A
RG=50 Ω VGS=10V
15
45
(see test circuit, figure 3)
180 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)
VDD= 200 V ID=3A VGS=10V 16
5
6
VDD=200V ID=3A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
15
15
35
25
65
25 nC
25
25
55
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
3
12
(pulsed)
V
(∗) For w ar d On Volt age ISD=3A VGS=0 1.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=3A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
180
1.2
Charge
I
RRM
Reverse Recovery
13
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
A
A
ns
µC
A
3/10
Loading...