SGS Thomson Microelectronics STD38NF03L Datasheet
N - CHANNEL 30V - 0.013 Ω - 38A TO-252
TYPE V
DSS
ST D38N F 03L 30 V < 0.019 Ω 38 A
■ TYPICALR
■ OPTIMIZEDFORHIGH SWTICHING
DS(on)
= 0.013 Ω
OPERATIONS
■ LOW THRESHOLDDRIVE
■ ADDSUFFIX ”T4” FORORDERING INTAPE
& REEL
R
DS(o n)
I
D
STD38NF03L
STripFET POWER MOSFET
PRELIMINARY DATA
3
1
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
DPAK
TO-252
(Suffix ”T4”)
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
D
I
DM
P
T
(•) Pulse width limitedby safe operating area (*)Value limitedby the package
Dra in- sour c e Volta ge (VGS=0) 30 V
DS
Drain- gate Voltage (RGS=20kΩ)30V
DGR
Gate-s ource Voltage ± 20 V
GS
(*) Dra in Cu rr ent (conti nuous) at Tc=25oC38A
Dra in Cu rr ent (conti nuous) at Tc= 100oC27A
I
D
(•) D ra in Cu rr ent (pulse d) 152 A
Tot al Dissipatio n at Tc=25oC45W
tot
Der ati ng Fa c t or 0.3 W/
St orage Tempe rat ure -65 to 175
stg
Max. Operating Jun ct ion Temperatur e 175
T
j
o
C
o
C
o
C
March 2000
1/6
STD38NF03L
THERMAL DATA
R
thj-pcb
R
thj-amb
R
thj-sink
T
Ther mal Resistanc e Junct ion-PC Board Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temper a tu r e For Soldering Purpose
l
3.33
62.5
1.5
300
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. U nit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Volta ge
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. U nit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA11.72.5V
Sta t ic Drain-s our c e On
Resistance
VGS=10V ID=19A
=4.5V ID=19A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
0.013
0.016
38 A
0.019
0.023ΩΩ
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. U nit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=19A 28 S
VDS=20V f=1MHz VGS= 0 V 1450
390
155
µ
µA
pF
pF
pF
A
2/6
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